Semiconductor device and method for driving the same
First Claim
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1. A semiconductor device comprising:
- a transistor comprising a first gate, a second gate, a third gate, and a semiconductor layer including a channel formation region, the third gate including an oxide semiconductor; and
a wiring,wherein the third gate includes a first region overlapping with the first gate and the channel formation region, and a second region extending beyond an edge of the first gate and overlapping with the second gate, andwherein the second region of the third gate is electrically connected to the wiring.
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Abstract
Data is written in the following manner: potentials of first and second control gates of a transistor are set at a potential for making a storage gate of the transistor a conductor, a potential of data to be stored is supplied to the storage gate, and at least one of the potentials of the first and second control gates is set at a potential for making the storage gate an insulator. Data is read in the following manner: the potential of the second control gate is set at a potential for making the storage gate an insulator; a potential is supplied to a wiring connected to one of a source and a drain of the transistor; then, a potential for reading is supplied to the first control gate to detect a change in the potential of a bit line connected to the other of the source and the drain.
132 Citations
26 Claims
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1. A semiconductor device comprising:
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a transistor comprising a first gate, a second gate, a third gate, and a semiconductor layer including a channel formation region, the third gate including an oxide semiconductor; and a wiring, wherein the third gate includes a first region overlapping with the first gate and the channel formation region, and a second region extending beyond an edge of the first gate and overlapping with the second gate, and wherein the second region of the third gate is electrically connected to the wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a transistor comprising a first gate, a second gate, a third gate, and a semiconductor layer including a channel formation region, the third gate including an oxide semiconductor; a first wiring; a second wiring; and a third wiring, wherein the first gate is electrically connected to the first wiring, wherein the second gate is electrically connected to the third wiring, wherein one of source and drain of the transistor is electrically connected to the second wiring, wherein the other of the source and the drain of the transistor is electrically connected to the third wiring, wherein the third gate comprises a first region overlapping with the first gate and the channel formation region, and a second region extending beyond an edge of the first gate and overlapping with the second gate, and wherein the second region of the third gate is electrically connected to the second wiring. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a transistor comprising a first control gate, a second control gate, a storage gate, and a semiconductor layer including a channel formation region, the storage gate including an oxide semiconductor; a control line; a bit line; and a word line, wherein the first control gate is electrically connected to the control line, wherein the second control gate is electrically connected to the word line, wherein the storage gate is electrically connected to the bit line, wherein one of source and drain of the transistor is electrically connected to the bit line, wherein the other of the source and the drain of the transistor is electrically connected to the word line, and wherein the storage gate comprises a first region overlapping with the first control gate and the channel formation region, and a second region extending beyond an edge of the first control gate and overlapping with the second control gate. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A method for driving a semiconductor device,
the semiconductor device comprising: -
a transistor comprising a first control gate, a second control gate, and a storage gate, the storage gate including an oxide semiconductor, the method comprising the steps of; setting a potential of the first control gate and a potential of the second control gate at a potential making the storage gate a conductor; supplying a potential to be stored to the storage gate; and setting at least one of the potential of the first control gate and the potential of the second control gate at a potential making the storage gate an insulator. - View Dependent Claims (22)
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23. A method for driving a semiconductor device,
the semiconductor device comprising a transistor comprising a first control gate, a second control gate, and a storage gate, the storage gate including an oxide semiconductor, the method comprising the steps of: -
supplying a first potential to one of source and drain of the transistor, supplying a second potential to the other of the source and the drain of the transistor; and supplying a third potential to the first control gate to detect a potential change of the one of source and drain. - View Dependent Claims (24, 25, 26)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsUochi, Hideki
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Primary Examiner(s)TRAN, MICHAEL THANH
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Application NumberUS13/348,950Publication NumberTime in Patent Office740 DaysField of Search365/150, 365/230.03US Class Current365/150CPC Class CodesG11C 16/0425 comprising cells containing...G11C 16/26 Sensing or reading circuits...H01L 27/1225 with semiconductor material...H01L 29/40114 the electrodes comprising a...H10B 41/70 the floating gate being an ...
