Chemical vapor deposition flow inlet elements and methods
First Claim
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1. A chemical vapor deposition reactor comprising:
- (a) a reaction chamber having upstream and downstream directions;
(b) a carrier support adapted to support a wafer carrier at a carrier location within the reaction chamber for rotation about an axis extending in the upstream and downstream directions;
(c) a flow inlet element mounted to the chamber upstream of the carrier location, the inlet element having a gas distribution surface extending in X and Y horizontal directions perpendicular to one another and perpendicular to the downstream direction, the flow inlet element having an array of elongated gas inlets adapted to discharge gases downstream into the chamber, the elongated gas inlets extending parallel to one another and across the gas distribution surface in the X horizontal direction and extending across a Y-direction medial plane of the reactor, the elongated gas inlets including a plurality of first gas inlets for discharging a first reactive gas and a plurality of second gas inlets for discharging a second reactive gas, the first gas inlets being spaced apart from one another in the Y horizontal direction, the second gas inlets being spaced apart from one another in the Y horizontal direction and interspersed with the first gas inlets, wherein the axis of rotation of the wafer carrier passes through the array of elongated gas inlets so that the first and second reactive gasses, once discharged from the first and second gas inlets to a point proximate the wafer carrier, are impelled into rotational flow and mixed with one another to deposit a substance on a wafer held by the carrier.
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Abstract
A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
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Citations
20 Claims
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1. A chemical vapor deposition reactor comprising:
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(a) a reaction chamber having upstream and downstream directions; (b) a carrier support adapted to support a wafer carrier at a carrier location within the reaction chamber for rotation about an axis extending in the upstream and downstream directions; (c) a flow inlet element mounted to the chamber upstream of the carrier location, the inlet element having a gas distribution surface extending in X and Y horizontal directions perpendicular to one another and perpendicular to the downstream direction, the flow inlet element having an array of elongated gas inlets adapted to discharge gases downstream into the chamber, the elongated gas inlets extending parallel to one another and across the gas distribution surface in the X horizontal direction and extending across a Y-direction medial plane of the reactor, the elongated gas inlets including a plurality of first gas inlets for discharging a first reactive gas and a plurality of second gas inlets for discharging a second reactive gas, the first gas inlets being spaced apart from one another in the Y horizontal direction, the second gas inlets being spaced apart from one another in the Y horizontal direction and interspersed with the first gas inlets, wherein the axis of rotation of the wafer carrier passes through the array of elongated gas inlets so that the first and second reactive gasses, once discharged from the first and second gas inlets to a point proximate the wafer carrier, are impelled into rotational flow and mixed with one another to deposit a substance on a wafer held by the carrier. - View Dependent Claims (2, 3, 4, 5, 6)
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- 7. A flow inlet element comprising a gas distribution surface facing in a downstream direction and extending in X and Y horizontal directions perpendicular to one another and perpendicular to the downstream direction, the flow inlet element having a plurality of elongated gas inlets adapted to discharge gases in the downstream direction into a chamber, the elongated gas inlets extending parallel to one another in the X horizontal direction and being arranged in a pattern extending over a major portion of the gas distribution surface, the elongated gas inlets including a plurality of first gas inlets adapted to discharge a first reactive gas and a plurality of second gas inlets adapted to discharge a second reactive gas, the first gas inlets being spaced apart from one another in the Y horizontal direction, the second gas inlets being spaced apart from one another in the Y horizontal direction and interspersed with the first gas inlets, wherein the flow inlet element further comprises gas distribution elements each having an internal bore and a wall positioned downstream of the internal bore, the wall having an opening, each of the elongated gas inlets communicating with a respective one of the internal bores through the opening, at least some of the gas distribution elements being separated by gaps, wherein a space is formed upstream of and in communication with the gaps so that a third gas may be discharged through the gaps.
- 16. A flow inlet element comprising a gas distribution surface facing in a downstream direction and extending in X and Y horizontal directions perpendicular to one another and perpendicular to the downstream direction, the flow inlet element having a plurality of elongated gas inlets adapted to discharge gases in the downstream direction into a chamber, the elongated gas inlets extending parallel to one another in the X horizontal direction and being arranged in a pattern extending over a major portion of the gas distribution surface, the elongated gas inlets including a plurality of first gas inlets adapted to discharge a first reactive gas and a plurality of second gas inlets adapted to discharge a second reactive gas, the first gas inlets being spaced apart from one another in the Y horizontal direction, the second gas inlets being spaced apart from one another in the Y horizontal direction and interspersed with the first gas inlets, wherein the first and second gas inlets are arranged in a pattern which is antisymmetrical about a medial plane extending in the X horizontal direction, such that for any first gas inlet disposed at a positive Y distance to one side of the X-direction medial plane, a second gas inlet is disposed at the corresponding negative Y distance to the opposite side of the X-direction medial plane so that the first and second reactive gasses, once discharged from the first and second gas inlets to a point proximate a rotating wafer carrier, are impelled into rotational flow and mixed with one another to deposit a substance on a wafer held by the carrier.
Specification