Diode energy converter for chemical kinetic electron energy transfer
First Claim
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1. A method of forming an energy converter for converting vibrational energy of a vibrationally energized species into a useful form of energy, comprising:
- forming a substrate;
forming a first semiconductor layer on the substrate;
forming a second semiconductor layer on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer forming a p-n junction;
forming a tailoring layer on the second semiconductor layer, the tailoring layer comprising one or more ballistic charge carrier materials;
forming an ohmic contact conductor on the tailoring layer, the ohmic contact conductor material comprising one or more ballistic charge carrier materials, the tailoring layer and the ohmic contact make a stable ohmic contact to the second semiconductor layer; and
forming a stabilizing interlayer conductor on the ohmic contact conductor material, the stabilizing interlayer conductor physically isolating chemical reactants from the semiconductor layer and acts as a barrier against chemical transport, the stabilizing interlayer conductor comprising one or more ballistic charge carrier materials; and
forming a conducting surface on the stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species.
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Abstract
An improved diode energy converter for chemical kinetic electron energy transfer is formed using nanostructures and includes identifiable regions associated with chemical reactions isolated chemically from other regions in the converter, a region associated with an area that forms energy barriers of the desired height, a region associated with tailoring the boundary between semiconductor material and metal materials so that the junction does not tear apart, and a region associated with removing heat from the semiconductor.
34 Citations
10 Claims
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1. A method of forming an energy converter for converting vibrational energy of a vibrationally energized species into a useful form of energy, comprising:
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forming a substrate; forming a first semiconductor layer on the substrate; forming a second semiconductor layer on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer forming a p-n junction; forming a tailoring layer on the second semiconductor layer, the tailoring layer comprising one or more ballistic charge carrier materials; forming an ohmic contact conductor on the tailoring layer, the ohmic contact conductor material comprising one or more ballistic charge carrier materials, the tailoring layer and the ohmic contact make a stable ohmic contact to the second semiconductor layer; and forming a stabilizing interlayer conductor on the ohmic contact conductor material, the stabilizing interlayer conductor physically isolating chemical reactants from the semiconductor layer and acts as a barrier against chemical transport, the stabilizing interlayer conductor comprising one or more ballistic charge carrier materials; and forming a conducting surface on the stabilizing interlayer conductor, the conducting surface being formed from one or more nanostructures in contact with a region having at least some vibrationally energized species. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification