Semiconductor device and manufacturing method thereof

• US 8,637,354 B2
• Filed: 06/14/2011
• Issued: 01/28/2014
• Est. Priority Date: 06/30/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sasagawa, Shinya, Nakayama, Hitoshi, Tsubuku, Masashi, Shimada, Daigo
• Primary Examiner(s): Ahmadi, Mohsen
• Assistant Examiner(s): Seven, Evren
• Application Number:
  US13/159,804
• Publication Number:
  US 20120003797A1
• Time in Patent Office: 959 Days
• Field of Search: 438/149
• US Class Current: 438/149
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor layer;

stacking a first conductive film, a second conductive film, and a third conductive film in this order over the semiconductor layer; and

performing at least three-stage etching on the first to third conductive films to form a wiring layer having a three-layer structure,

wherein the three-stage etching comprises;

a first etching process, which is performed until the first conductive film is exposed;

a second etching process, which is performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the semiconductor layer is lower than the etching rate in the first etching process; and

a third etching process, which is performed under the condition that etching rates for the first to the third conductive films are higher than the etching rates in the second etching process.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first and the second conductive films are thicker than the third conductive film.

3. The method for manufacturing a semiconductor device according to claim 1, wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the first conductive film and the third conductive film are titanium films and the second conductive film is an aluminum film.

5. The method for manufacturing a semiconductor device according to claim 1,

wherein the first etching process is performed using a gas containing more chlorine than fluorine as its main component;

wherein the second etching process is performed using a gas containing more fluorine than chlorine as its main component; and

wherein the third etching process is performed using a gas containing more chlorine than fluorine as its main component.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the first etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

7. The method for manufacturing a semiconductor device according to claim 5, wherein the second etching process is performed using a SF₆ gas.

8. The method for manufacturing a semiconductor device according to claim 5, wherein the third etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

9. The method for manufacturing a semiconductor device according to claim 5, wherein the third etching process is performed in a shorter time than the first etching process.

10. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor layer;

stacking a first conductive film, a second conductive film, and a third conductive film in this order over the semiconductor layer;

performing at least three-stage etching on the first to third conductive films to form a first wiring layer having a three-layer structure;

forming an insulating layer to cover the first wiring layer and the semiconductor layer; and

forming a second wiring layer to overlap with the semiconductor layer over the insulating layer; and

wherein the three-stage etching comprises;

a first etching process, which is performed until the first conductive film is exposed;

a second etching process, which is performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the semiconductor layer is lower than the etching rate in the first etching process; and

a third etching process, which is performed under the condition that etching rates for the first to the third conductive films are higher than the etching rates in the second etching process.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the first and the second conductive films are thicker than the third conductive film.

12. The method for manufacturing a semiconductor device according to claim 10, wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film.

13. The method for manufacturing a semiconductor device according to claim 10, wherein the first conductive film and the third conductive film are titanium films and the second conductive film is an aluminum film.

14. The method for manufacturing a semiconductor device according to claim 10,

wherein the first etching process is performed using a gas containing more chlorine than fluorine as its main component;

wherein the second etching process is performed using a gas containing more fluorine than chlorine as its main component; and

wherein the third etching process is performed using a gas containing more chlorine than fluorine as its main component.

15. The method for manufacturing a semiconductor device according to claim 14, wherein the first etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

16. The method for manufacturing a semiconductor device according to claim 14, wherein the second etching process is performed using a SF₆ gas.

17. The method for manufacturing a semiconductor device according to claim 14, wherein the third etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

18. The method for manufacturing a semiconductor device according to claim 14, wherein the third etching process is performed in a shorter time than the first etching process.

19. A method for manufacturing a semiconductor device comprising the steps of:

forming a first wiring layer;

forming an insulating layer to cover the first wiring layer;

forming an oxide semiconductor layer over the insulating layer;

stacking a first conductive film, a second conductive film, and a third conductive film in this order over the oxide semiconductor layer; and

performing at least three-stage etching on the first to third conductive films to form a second wiring layer having a three-layer structure,

wherein the three-stage etching comprises;

a first etching process, which is performed until the first conductive film is exposed;

a second etching process, which is performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the oxide semiconductor layer is lower than the etching rate in the first etching process; and

a third etching process, which is performed under the condition that etching rates for the first to the third conductive films are higher than the etching rates in the second etching process.

20. The method for manufacturing a semiconductor device according to claim 19, wherein the first and the second conductive films are thicker than the third conductive film.

21. The method for manufacturing a semiconductor device according to claim 19, wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film.

22. The method for manufacturing a semiconductor device according to claim 19, wherein the first conductive film and the third conductive film are titanium films and the second conductive film is an aluminum film.

23. The method for manufacturing a semiconductor device according to claim 19, wherein a material of the oxide semiconductor layer is IGZO.

24. The method for manufacturing a semiconductor device according to claim 19,

wherein the first etching process is performed using a gas containing more chlorine than fluorine as its main component;

wherein the second etching process is performed using a gas containing more fluorine than chlorine as its main component; and

wherein the third etching process is performed using a gas containing more chlorine than fluorine as its main component.

25. The method for manufacturing a semiconductor device according to claim 24, wherein the first etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

26. The method for manufacturing a semiconductor device according to claim 24, wherein the second etching process is performed using a SF₆ gas.

27. The method for manufacturing a semiconductor device according to claim 24, wherein the third etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

28. The method for manufacturing a semiconductor device according to claim 24, wherein the third etching process is performed in a shorter time than the first etching process.

29. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide semiconductor layer;

stacking a first conductive film, a second conductive film, and a third conductive film in this order over the oxide semiconductor layer;

performing at least three-stage etching on the first to third conductive films to form a first wiring layer having a three-layer structure;

forming an insulating layer to cover the first wiring layer and the oxide semiconductor layer; and

forming a second wiring layer to overlap with the oxide semiconductor layer over the insulating layer; and

wherein the three-stage etching comprises;

a first etching process, which is performed until the first conductive film is exposed;

a second etching process, which is performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the oxide semiconductor layer is lower than the etching rate in the first etching process; and

a third etching process, which is performed under the condition that etching rates for the first to the third conductive films are higher than the etching rates in the second etching process.

30. The method for manufacturing a semiconductor device according to claim 29, wherein the first and the second conductive films are thicker than the third conductive film.

31. The method for manufacturing a semiconductor device according to claim 29, wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film.

32. The method for manufacturing a semiconductor device according to claim 29, wherein the first conductive film and the third conductive film are titanium films and the second conductive film is an aluminum film.

33. The method for manufacturing a semiconductor device according to claim 29, wherein a material of the oxide semiconductor layer is IGZO.

34. The method for manufacturing a semiconductor device according to claim 29,

wherein the first etching process is performed using a gas containing more chlorine than fluorine as its main component;

wherein the second etching process is performed using a gas containing more fluorine than chlorine as its main component; and

wherein the third etching process is performed using a gas containing more chlorine than fluorine as its main component.

35. The method for manufacturing a semiconductor device according to claim 34, wherein the first etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

36. The method for manufacturing a semiconductor device according to claim 34, wherein the second etching process is performed using a SF₆ gas.

37. The method for manufacturing a semiconductor device according to claim 34, wherein the third etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

38. The method for manufacturing a semiconductor device according to claim 34, wherein the third etching process is performed in a shorter time than the first etching process.