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Transistor having oxide semiconductor with electrode facing its side surface

  • US 8,637,861 B2
  • Filed: 11/18/2010
  • Issued: 01/28/2014
  • Est. Priority Date: 11/20/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a first electrode;

    an oxide semiconductor which is formed over and in contact with the first electrode and which has a thickness of greater than 3 μ

    m, the oxide semiconductor having a top surface, a bottom surface which is parallel to the top surface, and one or more side surfaces which are not parallel to the top surface;

    a second electrode over and in contact with the oxide semiconductor;

    a gate insulating film covering the first electrode, the oxide semiconductor and the second electrode; and

    a third electrode facing each of the one or more side surfaces of the oxide semiconductor with the gate insulating film provided between the third electrode and each of the one or more side surfaces of the oxide semiconductor,wherein a length of a side of the bottom surface of the oxide semiconductor is less than one third of the thickness of the oxide semiconductor.

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