Transistor having oxide semiconductor with electrode facing its side surface

• US 8,637,861 B2
• Filed: 11/18/2010
• Issued: 01/28/2014
• Est. Priority Date: 11/20/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Kawae, Daisuke
• Primary Examiner(s): Jung, Michael
• Application Number:
  US12/948,969
• Publication Number:
  US 20110121284A1
• Time in Patent Office: 1,167 Days
• Field of Search: None
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.

Claims

1. A transistor comprising:

a first electrode;

an oxide semiconductor which is formed over and in contact with the first electrode and which has a thickness of greater than 3 μ

m, the oxide semiconductor having a top surface, a bottom surface which is parallel to the top surface, and one or more side surfaces which are not parallel to the top surface;

a second electrode over and in contact with the oxide semiconductor;

a gate insulating film covering the first electrode, the oxide semiconductor and the second electrode; and

a third electrode facing each of the one or more side surfaces of the oxide semiconductor with the gate insulating film provided between the third electrode and each of the one or more side surfaces of the oxide semiconductor,

wherein a length of a side of the bottom surface of the oxide semiconductor is less than one third of the thickness of the oxide semiconductor.

2. The transistor according to claim 1, wherein the second electrode is in contact with an entirety of the top surface of the oxide semiconductor.

3. The transistor according to claim 1, wherein the oxide semiconductor has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

4. The transistor according to claim 1, wherein the third electrode surrounds the oxide semiconductor.

5. The transistor according to claim 1, wherein the third electrode has a ring shape.

6. A transistor comprising:

a first electrode;

an oxide semiconductor which is over and in contact with the first electrode and which has a thickness of greater than 3 μ

m, the oxide semiconductor having a top surface, a bottom surface which is parallel to the top surface, and one or more side surfaces which are not parallel to the top surface;

a second electrode over and in contact with the oxide semiconductor;

a gate insulating film covering the first electrode, the oxide semiconductor,

and the second electrode; and

a third electrode facing each of the one or more side surfaces of the oxide semiconductor with the gate insulating film provided between the third electrode and each of the one or more side surfaces of the oxide semiconductor,

wherein the oxide semiconductor includes a crystal region in a region that is in contact with the gate insulating film, and

wherein a length of a side of the bottom surface of the oxide semiconductor is less than one third of the thickness of the oxide semiconductor.

7. The transistor according to claim 6, wherein the second electrode is in contact with an entirety of the top surface of the oxide semiconductor.

8. The transistor according to claim 6, wherein the oxide semiconductor has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

9. The transistor according to claim 6, wherein the third electrode surrounds the oxide semiconductor.

10. The transistor according to claim 6, wherein the third electrode has a ring shape.

11. A transistor comprising:

a first electrode;

an oxide semiconductor which is over and in contact with the first electrode and which has a thickness of greater than 3 μ

m, the oxide semiconductor having a top surface, a bottom surface which is parallel to the top surface, and one or more side surfaces which are not parallel to the top surface;

a second electrode over and in contact with the oxide semiconductor;

a gate insulating film covering the first electrode, the oxide semiconductor, and the second electrode; and

a third electrode facing each of the one or more side surfaces of the oxide semiconductor with the gate insulating film provided between the third electrode and each of the one or more side surfaces of the oxide semiconductor,

wherein the second electrode overlaps with the first electrode, and

wherein a length of a side of the bottom surface of the oxide semiconductor is less than one third of the thickness of the oxide semiconductor.

12. The transistor according to claim 11, wherein the second electrode is in contact with an entirety of the top surface of the oxide semiconductor.

13. The transistor according to claim 11, wherein the oxide semiconductor has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

14. The transistor according to claim 11, wherein the third electrode surrounds the oxide semiconductor.

15. The transistor according to claim 11, wherein the third electrode has a ring shape.

16. A transistor comprising:

a first electrode;

an oxide semiconductor which is over and in contact with the first electrode and which has a thickness of greater than 3 μ

m, the oxide semiconductor having a top surface, a bottom surface which is parallel to the top surface, and one or more side surfaces which are not parallel to the top surface;

a second electrode over and in direct contact with the oxide semiconductor;

an insulating film covering the first electrode, the oxide semiconductor, and the second electrode; and

a third electrode facing each of the one or more side surfaces of the oxide semiconductor with the insulating film provided between the third electrode and each of the one or more side surfaces of the oxide semiconductor,

wherein a length of a side of the bottom surface of the oxide semiconductor is less than one third of the thickness of the oxide semiconductor.

17. The transistor according to claim 16, wherein the second electrode is in contact with an entirety of the top surface of the oxide semiconductor.

18. The transistor according to claim 16, wherein the oxide semiconductor has a carrier density of lower than 1×

10¹⁴ cm<sup>−

3</sup>.

19. The transistor according to claim 16, wherein the third electrode surrounds the oxide semiconductor.

20. The transistor according to claim 16, wherein the third electrode has a ring shape.