Display device

• US 8,637,863 B2
• Filed: 08/27/2012
• Issued: 01/28/2014
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Thai, Luan C
• Application Number:
  US13/594,934
• Publication Number:
  US 20120319118A1
• Time in Patent Office: 519 Days
• Field of Search: 257/43, 257/59, 257/E29.296, 257/E29.003
• US Class Current: 257/43
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film; a second gate electrode over the second gate insulating film; an organic resin film having flatness over the second gate insulating film; a pixel electrode over the organic resin film having flatness, wherein the concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×10¹⁶ cm⁻³.

Claims

1. A display device comprising:

a first gate electrode;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film;

a source electrode and a drain electrode over the oxide semiconductor film, wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film;

a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film;

a second gate electrode over the second gate insulating film; and

an organic resin film over the second gate insulating film,

wherein the organic resin film does not overlap the second gate electrode.

3. The display device according to claim 1, further comprising a pixel electrode over the organic resin film, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode.

5. The display device according to claim 1, wherein a concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×

10¹⁶ cm<sup>−

3</sup>.

7. A display device according to claim 1, further comprising a passivation film over the second gate electrode and the second gate insulating film.

9. A display device according to claim 1, wherein the organic resin film comprises an acrylic resin film, or a polyimide resin film.

2. A display device comprising:

a first gate electrode;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film;

a source electrode and a drain electrode in contact with the oxide semiconductor film;

a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film;

a second gate electrode over the second gate insulating film; and

an organic resin film over the second gate insulating film,

wherein the organic resin film does not overlap the second gate electrode.

4. The display device according to claim 2, further comprising a pixel electrode over the organic resin film, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode.

6. The display device according to claim 2, wherein a concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×

10¹⁶ cm<sup>−

3</sup>.

8. A display device according to claim 2, further comprising a passivation film over the second gate electrode and the second gate insulating film.

10. A display device according to claim 2, wherein the organic resin film comprises an acrylic resin film, or a polyimide resin film.

11. A semiconductor device comprising:

a first gate electrode;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film, the oxide semiconductor film comprising a channel region, the channel region including indium, zinc and gallium;

a second gate insulating film over the oxide semiconductor film; and

a second gate electrode over the second gate insulating film, wherein the second gate electrode overlaps the first gate electrode with the oxide semiconductor film therebetween,

wherein the channel region comprises a crystalline region in which c-axis is oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film.

12. The semiconductor device according to claim 11, further comprising:

a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film; and

a pixel electrode electrically connected to one of the source electrode and the drain electrode.

13. The semiconductor device according to claim 11, further comprising:

a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film;

an organic resin film over the source electrode and the drain electrode; and

a pixel electrode over the organic resin film, the pixel electrode being electrically connected to one of the source electrode and the drain electrode.

14. A display device comprising:

a first gate electrode;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film, the oxide semiconductor film comprising a channel region, the channel region including indium, zinc and gallium;

a source electrode and a drain electrode over the oxide semiconductor film, wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film;

a second gate insulating film over the oxide semiconductor film;

a second gate electrode over the second gate insulating film, wherein the second gate electrode overlaps the first gate electrode with the oxide semiconductor film therebetween,

an organic resin film over the second gate insulating film, wherein the organic resin film does not overlap the second gate electrode; and

a pixel electrode over the organic resin film,

wherein the channel region comprises a crystalline region in which c-axis is oriented in a direction substantially perpendicular to a surface of the oxide semiconductor film.

15. The display device according to claim 14, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode.

16. The display device according to claim 14, wherein the channel region includes indium, zinc and gallium.

17. A display device comprising:

a first gate electrode;

a first gate insulating film over the first gate electrode;

an oxide semiconductor film over the first gate insulating film, the oxide semiconductor film comprising a channel region, the channel region including indium, zinc and gallium;

a source electrode and a drain electrode electrically connected to the oxide semiconductor film;

a second gate insulating film over the oxide semiconductor film;

a second gate electrode over the second gate insulating film, wherein the second gate electrode is overlapped with the first gate electrode with the oxide semiconductor film therebetween; and

a pixel electrode electrically connected to one of the source electrode and the drain electrode,

wherein the channel region comprises microcrystals, and particle size of the microcrystals is equal to or less than 4 nm.

18. The display device according to claim 17, wherein particle size of the microcrystals is equal to or more than 2 nm.

19. The display device according to claim 17, further comprising a light emitting layer over the pixel electrode.

20. The display device according to claim 17, further comprising a liquid crystal layer over the pixel electrode.

21. A television including the display device according to claim 17.