Single photon IR detectors and their integration with silicon detectors

• US 8,637,875 B2
• Filed: 07/13/2009
• Issued: 01/28/2014
• Est. Priority Date: 07/11/2008
• Status: Expired due to Fees

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Finkelstein, Hod, Esener, Sadik C., Lo, Yu-Hwa, Zhao, Kai, Cheng, James, You, Sifang
• Primary Examiner(s): WOLDEGEORGIS, ERMIAS T
• Application Number:
  US12/502,225
• Publication Number:
  US 20130082286A1
• Time in Patent Office: 1,660 Days
• Field of Search: 257/186, 257/438, 257/603, 257/605, 257/606, 257/E29.335, 257/E31.063, 257/E31.064, 257/E31.116, 257/184, 257/440
• US Class Current: 257/84
• CPC Class Codes: H01L 31/0336 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
• CPC Class Codes: H01L 31/055 where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region.

Claims

1. A semiconductor radiation sensing device, comprising:

a semiconductor absorption region structured to absorb photons at a first wavelength to generate one or more charged carriers;

a multiplication region structured to receive the one or more charged carriers, the multiplication region structured to generate an avalanche of electrons in response to the one or more charged carriers and emit secondary photons at a second wavelength shorter than the first wavelength;

a buffer region structured to impede electrons or holes from the avalanche from passing through the buffer region to cause a reduction in an electric field across the multiplication region to quench the avalanche; and

a bandgap grading region adjacent to the absorption region, at least a portion of the bandgap grading region having a spatially varying bandgap profile that monotonically changes between a first region that interfaces with the absorption region and a second region.

2. The device as in claim 1, wherein the buffer region is structured to allow electrons to pass through the buffer region to cause an increase in the electric field across the multiplication region to facilitate a recovery from the avalanche.

3. The device as in claim 1, wherein the buffer region is structured to allow holes to pass through the buffer region to cause an increase in the electric field across the multiplication region to facilitate a recovery from the avalanche.

4. The device as in claim 1, wherein the bandgap grading region is positioned between the absorption region and the multiplication region, wherein the second region of the bandgap grading region interfaces with the multiplication region.

5. The device as in claim 1, wherein the bandgap grading region is positioned between the absorption region and the buffer region, wherein the second region of the bandgap grading region interfaces with the buffer region.

6. The device as in claim 1, wherein the buffer region and the multiplication region are structured to create an energy barrier by a valence band offset.

7. The device as in claim 1, further comprising:

a mechanism to bias the second optical sensing structure at a DC voltage.

8. The device as in claim 1, wherein the multiplication region is optically coupled with an optical sensing structure.

9. The device as in claim 1, wherein the buffer region comprises an InAlAs layer.

10. The device as in claim 1, wherein the buffer region comprises an InAlAs, InGaAsP, and InAlAs stack.

11. The device as in claim 1, wherein the bandgap grading region comprises one or more InGaAsP graded index layers.

12. A semiconductor radiation sensing device, comprising:

a semiconductor absorption region structured to receive light at a first wavelength to generate one or more charged carriers by absorbing received light;

a multiplication region structured to receive the one or more charged carriers generated from the semiconductor absorption region and to generate an avalanche of secondary charged carriers in response to the one or more charged carriers and emit secondary photons from the secondary charged carriers;

a region coupled between the absorption region and the multiplication region, the region comprising a mechanism that quenches the avalanche of the multiplication region after occurrence of the avalanche and resets the multiplication region for a next avalanche; and

a semiconductor transition region formed between the multiplication region and the absorption region to have a first bandgap at a first interface with the multiplication region that is equal to or similar to a bandgap of the multiplication region and a second bandgap at a second interface with the absorption region that is equal to or similar to a bandgap of the absorption region, the semiconductor transition region having a spatially varying bandgap between the first and second interfaces to eliminate an abrupt change in bandgap between the multiplication region and the absorption region.

13. The device as in claim 12, wherein the semiconductor transition region comprises a plurality of semiconductor layers that have different bandgaps to form the spatially varying bandgap between the first and second interfaces.

14. A semiconductor radiation sensing device, comprising:

a semiconductor absorption region structured to receive light at a first wavelength to generate one or more charged carriers by absorbing received light;

a multiplication region structured to receive the one or more charged carriers generated from the semiconductor absorption region and to generate an avalanche of secondary charged carriers in response to the one or more charged carriers and emit secondary photons from the secondary charged carriers;

a region coupled between the absorption region and the multiplication region, the region comprising a mechanism that quenches the avalanche of the multiplication region after occurrence of the avalanche and resets the multiplication region for a next avalanche; and

a semiconductor transition region formed between the buffer region and the absorption region to have a first bandgap at a first interface with the buffer region that is equal to or similar to a bandgap of the buffer region and a second bandgap at a second interface with the absorption region that is equal to or similar to a bandgap of the absorption region, the semiconductor transition region having a spatially varying bandgap between the first and second interfaces to eliminate an abrupt change in bandgap between the buffer region and the absorption region.

15. The device as in claim 14, wherein the semiconductor transition region comprises a plurality of semiconductor layers that have different bandgaps to form the spatially varying bandgap between the first and second interfaces.

16. A semiconductor device, comprising:

a first optical sensing structure structured to absorb light at a first optical wavelength; and

a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure,

wherein the first optical sensing structure comprises a silicon substrate and is a silicon-based optical detector,

wherein the second optical sensing structure is an IR optical detector which emits light at the first optical wavelength by converting energy in absorbed light at the second optical wavelength via luminescence resulting from hot carrier recombination.

17. The device as in claim 16, further comprising:

a silicon dielectric layer as an interfacing layer formed between the first optical sensing structure and the second optical sensing structure.

18. The device as in claim 16, further comprising:

a complementary metal-oxide-semiconductor (CMOS) circuit to control the first optical sensing structure and the second optical sensing structure.

19. The device as in claim 16, wherein the second optical sensing structure comprises an absorption structure which absorbs light at the second optical wavelength and a multiplication material layer between the absorption structure and the first optical sensing structure to emit light at the first optical wavelength.

20. The device as in claim 19, wherein the absorption structure has a bandgap less than a bandgap of the multiplication structure.

21. The device as in claim 19, wherein the absorption structure has a bandgap similar to a bandgap of the multiplication structure.

22. A semiconductor device, comprising:

a first optical sensing structure structured to absorb light at a first optical wavelength; and

a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure,

wherein the second optical sensing structure comprises an absorption structure which absorbs light at the second optical wavelength and a multiplication structure between the absorption structure and the first optical sensing structure to emit light at the first optical wavelength.

23. The device as in claim 22, wherein the absorption structure has a bandgap less than a bandgap of the multiplication structure.

24. The device as in claim 22, wherein the absorption structure has a bandgap similar to a bandgap of the multiplication structure.

25. A semiconductor device, comprising:

a first optical sensing structure structured to absorb light at a first optical wavelength;

a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, and

a dielectric layer interfacing between the first and the second optical sensing structures to permit transmission of light and to fuse the first and the second optical sensing structures together as a single structure.

26. A semiconductor device, comprising:

a first optical sensing structure structured to absorb light at a first optical wavelength; and

a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure,

wherein a dead time of the second optical sensing structure overlaps with an avalanche time of the first optical sensing structure to prevent a positive feedback loop between the first and second optical sensing structures.

27. A semiconductor device, comprising:

a first optical sensing structure structured to absorb light at a first optical wavelength; and

a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure,

wherein the second optical sensing structure comprises;

an absorption region structured to absorb photons at the second wavelength,

a multiplication region structured to generate an avalanche of electrons in response to an absorbed photon to cause photons to be emitted at the first optical wavelength, and

a buffer region coupled with the multiplication region, and structured to impede electrons or holes from the avalanche from passing through the buffer region to cause a reduction in an electric field across the multiplication region to quench the avalanche, and to allow electrons or holes to pass through the buffer region to cause an increase in the electric field across the multiplication region to facilitate a recovery from the avalanche.

28. The device as in claim 27, further comprising:

a bandgap grading region coupled with the multiplication region, at least a portion of the bandgap grading region having a spatially varying bandgap profile that monotonically changes between a first region that interfaces with the multiplication region and a second region.

29. The device as in claim 27, further comprising:

a bandgap grading region coupled with the buffer region, at least a portion of the bandgap grading region having a spatially varying bandgap profile that monotonically changes between a first region that interfaces with the buffer region and a second region.

30. The device as in claim 27, further comprising:

a mechanism to bias the second optical sensing structure at a DC voltage.

31. The device as in claim 27, wherein the multiplication region is optically coupled with the first optical sensing structure.

32. The device as in claim 27, wherein the buffer region comprises an InAlAs layer.

33. The device as in claim 27, wherein the buffer region comprises an InAlAs, InGaAsP, and InAlAs stack.

34. A semiconductor device, comprising:

a first optical sensing structure structured to absorb light at a first optical wavelength; and

a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure,

wherein the first optical sensing structure comprises an array of detector pixels, wherein the second optical sensing structure comprises an array of detector pixels, the device further comprising one or more layers to minimize inter-pixel cross-talk between the first and second optical sensing structures.