Single photon IR detectors and their integration with silicon detectors
First Claim
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1. A semiconductor radiation sensing device, comprising:
- a semiconductor absorption region structured to absorb photons at a first wavelength to generate one or more charged carriers;
a multiplication region structured to receive the one or more charged carriers, the multiplication region structured to generate an avalanche of electrons in response to the one or more charged carriers and emit secondary photons at a second wavelength shorter than the first wavelength;
a buffer region structured to impede electrons or holes from the avalanche from passing through the buffer region to cause a reduction in an electric field across the multiplication region to quench the avalanche; and
a bandgap grading region adjacent to the absorption region, at least a portion of the bandgap grading region having a spatially varying bandgap profile that monotonically changes between a first region that interfaces with the absorption region and a second region.
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Abstract
Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region.
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Citations
34 Claims
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1. A semiconductor radiation sensing device, comprising:
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a semiconductor absorption region structured to absorb photons at a first wavelength to generate one or more charged carriers; a multiplication region structured to receive the one or more charged carriers, the multiplication region structured to generate an avalanche of electrons in response to the one or more charged carriers and emit secondary photons at a second wavelength shorter than the first wavelength; a buffer region structured to impede electrons or holes from the avalanche from passing through the buffer region to cause a reduction in an electric field across the multiplication region to quench the avalanche; and a bandgap grading region adjacent to the absorption region, at least a portion of the bandgap grading region having a spatially varying bandgap profile that monotonically changes between a first region that interfaces with the absorption region and a second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor radiation sensing device, comprising:
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a semiconductor absorption region structured to receive light at a first wavelength to generate one or more charged carriers by absorbing received light; a multiplication region structured to receive the one or more charged carriers generated from the semiconductor absorption region and to generate an avalanche of secondary charged carriers in response to the one or more charged carriers and emit secondary photons from the secondary charged carriers; a region coupled between the absorption region and the multiplication region, the region comprising a mechanism that quenches the avalanche of the multiplication region after occurrence of the avalanche and resets the multiplication region for a next avalanche; and a semiconductor transition region formed between the multiplication region and the absorption region to have a first bandgap at a first interface with the multiplication region that is equal to or similar to a bandgap of the multiplication region and a second bandgap at a second interface with the absorption region that is equal to or similar to a bandgap of the absorption region, the semiconductor transition region having a spatially varying bandgap between the first and second interfaces to eliminate an abrupt change in bandgap between the multiplication region and the absorption region. - View Dependent Claims (13)
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14. A semiconductor radiation sensing device, comprising:
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a semiconductor absorption region structured to receive light at a first wavelength to generate one or more charged carriers by absorbing received light; a multiplication region structured to receive the one or more charged carriers generated from the semiconductor absorption region and to generate an avalanche of secondary charged carriers in response to the one or more charged carriers and emit secondary photons from the secondary charged carriers; a region coupled between the absorption region and the multiplication region, the region comprising a mechanism that quenches the avalanche of the multiplication region after occurrence of the avalanche and resets the multiplication region for a next avalanche; and a semiconductor transition region formed between the buffer region and the absorption region to have a first bandgap at a first interface with the buffer region that is equal to or similar to a bandgap of the buffer region and a second bandgap at a second interface with the absorption region that is equal to or similar to a bandgap of the absorption region, the semiconductor transition region having a spatially varying bandgap between the first and second interfaces to eliminate an abrupt change in bandgap between the buffer region and the absorption region. - View Dependent Claims (15)
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16. A semiconductor device, comprising:
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a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, wherein the first optical sensing structure comprises a silicon substrate and is a silicon-based optical detector, wherein the second optical sensing structure is an IR optical detector which emits light at the first optical wavelength by converting energy in absorbed light at the second optical wavelength via luminescence resulting from hot carrier recombination. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A semiconductor device, comprising:
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a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, wherein the second optical sensing structure comprises an absorption structure which absorbs light at the second optical wavelength and a multiplication structure between the absorption structure and the first optical sensing structure to emit light at the first optical wavelength. - View Dependent Claims (23, 24)
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25. A semiconductor device, comprising:
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a first optical sensing structure structured to absorb light at a first optical wavelength; a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, and a dielectric layer interfacing between the first and the second optical sensing structures to permit transmission of light and to fuse the first and the second optical sensing structures together as a single structure.
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26. A semiconductor device, comprising:
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a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, wherein a dead time of the second optical sensing structure overlaps with an avalanche time of the first optical sensing structure to prevent a positive feedback loop between the first and second optical sensing structures.
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27. A semiconductor device, comprising:
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a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, wherein the second optical sensing structure comprises; an absorption region structured to absorb photons at the second wavelength, a multiplication region structured to generate an avalanche of electrons in response to an absorbed photon to cause photons to be emitted at the first optical wavelength, and a buffer region coupled with the multiplication region, and structured to impede electrons or holes from the avalanche from passing through the buffer region to cause a reduction in an electric field across the multiplication region to quench the avalanche, and to allow electrons or holes to pass through the buffer region to cause an increase in the electric field across the multiplication region to facilitate a recovery from the avalanche. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A semiconductor device, comprising:
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a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures, wherein the second optical sensing structure is structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure, wherein the first optical sensing structure comprises an array of detector pixels, wherein the second optical sensing structure comprises an array of detector pixels, the device further comprising one or more layers to minimize inter-pixel cross-talk between the first and second optical sensing structures.
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Specification