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Single photon IR detectors and their integration with silicon detectors

  • US 8,637,875 B2
  • Filed: 07/13/2009
  • Issued: 01/28/2014
  • Est. Priority Date: 07/11/2008
  • Status: Expired due to Fees
First Claim
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1. A semiconductor radiation sensing device, comprising:

  • a semiconductor absorption region structured to absorb photons at a first wavelength to generate one or more charged carriers;

    a multiplication region structured to receive the one or more charged carriers, the multiplication region structured to generate an avalanche of electrons in response to the one or more charged carriers and emit secondary photons at a second wavelength shorter than the first wavelength;

    a buffer region structured to impede electrons or holes from the avalanche from passing through the buffer region to cause a reduction in an electric field across the multiplication region to quench the avalanche; and

    a bandgap grading region adjacent to the absorption region, at least a portion of the bandgap grading region having a spatially varying bandgap profile that monotonically changes between a first region that interfaces with the absorption region and a second region.

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