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Transistor having recess channel and fabricating method thereof

  • US 8,637,923 B2
  • Filed: 06/24/2010
  • Issued: 01/28/2014
  • Est. Priority Date: 12/26/2006
  • Status: Active Grant
First Claim
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1. A transistor, comprising:

  • a substrate including a trench;

    an insulation layer filled in a portion of the trench, wherein a top surface of the insulation layer comprises a ‘

    V’

    shape and a bottom surface comprising a rounded shape;

    a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a width that is less than thicknesses of the insulation layer, the insulation layer being disposed below the gate insulation layer; and

    a gate electrode filled in the trench.

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