Semiconductor device and method for manufacturing the same

• US 8,637,932 B2
• Filed: 03/09/2012
• Issued: 01/28/2014
• Est. Priority Date: 04/25/2008
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Eguchi, Shingo
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US13/416,600
• Publication Number:
  US 20120161297A1
• Time in Patent Office: 690 Days
• Field of Search: 257347-354, 257/E21.561, 438/30, 438/151
• US Class Current: 257/347
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19043 being a resistor
• CPC Class Codes: H01L 2924/30105 Capacitance

Abstract

In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

Claims

1. A semiconductor device comprising:

a first layer;

a first organic layer over the first layer;

a first insulating layer over the first layer;

a transistor over the first insulating layer;

a conductive layer over the transistor;

a second insulating layer over the conductive layer;

a second layer over the second insulating layer;

wherein the first layer comprises a fibrous body and an organic resin,

wherein the second layer comprises a fibrous body and an organic resin, and

wherein the first organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.

2. The semiconductor device according to claim 1, further comprising:

an adhesive layer between the first insulating layer and the first organic layer.

3. The semiconductor device according to claim 1, further comprising:

a second organic layer over the second layer,

wherein the second organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.

4. The semiconductor device according to claim 1, wherein the first organic layer is a film having rubber elasticity.

5. The semiconductor device according to claim 1, wherein the first organic layer is an aramid film.

6. The semiconductor device according to claim 1, wherein a thickness of the first organic layer is from 5 μ

m to 20 μ

m.

7. The semiconductor device according to claim 1, further comprising an antenna provided between the second insulating layer and the second layer.

8. The semiconductor device according to claim 7, further comprising an inorganic insulating layer provided between the antenna and the second layer.

9. The semiconductor device according to claim 1,

wherein the first layer has a structure body in which the fibrous body is impregnated with the organic resin, and

wherein the second layer has a structure body in which the fibrous body is impregnated with the organic resin.

10. The semiconductor device according to claim 9, wherein the fibrous body is a woven fabric or a nonwoven fabric.

11. The semiconductor device according to claim 9, wherein the fibrous body is formed using one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

12. The semiconductor device according to claim 9, wherein the organic resin comprises a thermosetting resin or a thermoplastic resin.

13. The semiconductor device according to claim 12, wherein the thermosetting resin is at least one from the group consisting of an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, and a cyanate resin.

14. The semiconductor device according to claim 12, wherein the thermoplastic resin is at least one from the group consisting of a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

15. The semiconductor device according to claim 1, wherein the first insulating film comprises at least one of silicon nitride, silicon oxynitride, and silicon nitride oxide.