Power circuit

• US 8,638,129 B2
• Filed: 08/20/2008
• Issued: 01/28/2014
• Est. Priority Date: 08/20/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Kanschat, Peter, Jansen, Uwe, Deboy, Gerald
• Primary Examiner(s): NGUYEN, LONG T
• Application Number:
  US12/195,157
• Publication Number:
  US 20100045361A1
• Time in Patent Office: 1,987 Days
• Field of Search: 327/108, 327/109, 327/374, 327/376, 327/377, 327/427, 327/432, 327/434, 327/436
• US Class Current: 327/108
• CPC Class Codes: H03K 17/06 Modifications for ensuring a fully conducting state

Abstract

A power circuit. One embodiment provides a circuit for driving a power transistor having a control electrode and a load path. The circuit includes a driver circuit configured to change the power transistor to a completely on or off state with the aid of a control signal supplied to the control electrode. A series circuit includes a semiconductor switching element and a capacitor. The series circuit is connected in parallel with the load path and the capacitor provides a supply voltage for the driver circuit.

Claims

1. A circuit for driving a power transistor having a control electrode and a load path, the circuit comprising:

a driver circuit configured to drive the power transistor via a control signal supplied to the control electrode so as to control the on and off state of the power transistor; and

a series circuit comprising a semiconductor switching element and a capacitor, the series circuit being coupled in parallel with the load path and the capacitor providing a supply voltage to the driver circuit,

wherein the driver circuit, when the supply voltage falls below a first threshold value, is configured to drive the power transistor via the control signal to create a voltage drop across the load path of the power transistor which is higher than the first threshold value, wherein the first threshold value is greater than a minimum value of the supply voltage required for proper operation of the driver circuit.

2. The circuit of claim 1, wherein the driver circuit is configured to drive the power transistor via the control signal to the control electrode so as to turn the power transistor from a completely on state to a partially on state to reduce a conductivity of the power transistor when the supply voltage falls below the first threshold value.

3. The circuit of claim 1, wherein the driver circuit is configured to drive the control electrode to the off state with the aid of the control signal when the supply voltage falls below a second threshold value.

4. The circuit of claim 1, wherein the driver circuit is configured to drive the control electrode to increase the voltage drop across the load path for a predefined amount of time.

5. The circuit of claim 1, comprising wherein the driver circuit is configured to reduce a voltage level of the control signal applied to the control electrode by a predefined amount.

6. The circuit of claim 1, wherein the driver circuit is configured to drive the semiconductor switching element to the on state when the supply voltage falls below the first threshold value and to drive the semiconductor switching element to the off state again when the supply voltage exceeds the first threshold value.

7. A circuit for driving a power transistor having a control electrode and a load path, the circuit comprising:

a driver circuit configured to control the on and off state of the power transistor via a control signal supplied by the driver circuit to the control electrode;

a series circuit comprising a semiconductor switching element and a capacitor, the series circuit being coupled in parallel with the load path and the capacitor providing a supply voltage to power the driver circuit,

the driver circuit being configured to drive the power transistor from a completely on state to a partially on state, in the event of the supply voltage falling below a first threshold value, via the control signal such that a voltage drop across the load path of the power transistor is higher than the first threshold value; and

a pulse generator configured to impose one or more control pulse onto the control signal when the supply voltage falls below the first threshold value.

8. A method for driving a power transistor having a control electrode and a load path, a driver circuit for driving the power transistor being supplied by a capacitor which provides a supply voltage to the drive circuit, the method comprising:

driving the control electrode with the driver circuit in accordance in response an input signal received by the driver circuit via a control signal provided by the driver circuit to the control electrode in such a manner that the power transistor is changed to an on state;

driving the control electrode with the drive circuit via the control signal in such a manner to turn the power transistor to only a partially on state so that a voltage drop across the load path of the power transistor is driven higher than a first threshold value when the supply voltage to the driver circuit falls below the first threshold value, wherein the first threshold value is greater than a minimum value of the supply voltage required for proper operation of the driver circuit.

9. The method of claim 8, comprising the driver circuit driving the power transistor via the control signal to the control electrode to turn the power transistor from the completely on state to a partially to reduce a conductivity of the power transistor when the supply voltage falls below the first threshold value.

10. The method of claim 8, comprising driving the control electrode to an off state with the aid of the control signal when the supply voltage falls below a second threshold value, the second threshold value being less than the first threshold value.

11. The method of claim 8, comprising driving the control electrode to increase the voltage drop across the load path for a predefined amount of time.

12. The method of claim 8, comprising reducing a voltage level of the control signal applied to the control electrode by a predetermined amount.

13. A power circuit comprising:

a power transistor having a control electrode and a load path;

a supply circuit comprising;

a driver circuit configured to control the on and off state of a power transistor via a control signal supplied to the control electrode by the driver circuit; and

a series circuit comprising a semiconductor switching element and a capacitor, the series circuit being connected in parallel with the load path and the capacitor providing a supply voltage for the driver circuit,

the driver circuit, in the event of the supply voltage falling below a first threshold value, configured to drive the power transistor via the control signal in such a manner that a voltage drop across the load path of the power transistor is driven higher than the first threshold value, wherein the first threshold value is greater than a minimum value of the supply voltage required for proper operation of the driver circuit.

14. The circuit of claim 13, wherein the driver circuit is configured to drive the power transistor to a partially on state via the control signal to the control electrode so as to reduce a conductivity of the load path when the supply voltage falls below the first threshold value and thereby drive the voltage drop across the load path higher.

15. The circuit of claim 13, wherein the driver circuit is configured to drive the control electrode to turn the power transistor to the off state via the control signal when the supply voltage falls below a second threshold value.

16. The circuit of claim 13, wherein the driver circuit is configured to drive the electrode to increase the voltage drop across the load path for a predefined amount of time.

17. The circuit of claim 13, comprising wherein the driver circuit is configured to reduce a voltage level of the control signal applied to the control electrode by a predefined amount.

18. The circuit of claim 15, comprising wherein the driver circuit is configured to drive the semiconductor switching element to the on state when the supply voltage falls below the first threshold value and to drive the switching element to the off state again when the supply voltage exceeds a third threshold value.

19. A power circuit comprising:

a power transistor having a control electrode and a load path;

a supply circuit comprising;

a driver circuit configured to control the on and off state of the power transistor via a control signal supplied to the control electrode by the driver circuit;

a series circuit comprising a semiconductor switching element and a capacitor, the series circuit being connected in parallel with the load path and the capacitor providing a supply voltage to power the driver circuit,

the driver circuit, if the supply voltage falls below a first threshold value, being configured to drive the power transistor via the control signal so as to turn the power transistor from a completely on state to a partially on state so that a voltage drop across the load path of the power transistor becomes greater than the threshold value; and

a pulse generator which is configured to impose one or more control pulses onto the control signal to the control electrode when the supply voltage falls below the first threshold value.

20. A method comprising:

providing a power transistor having a control electrode and a load path, a driver circuit for driving the power transistor, and a capacitor to provide a supply voltage to the driver circuit;

driving the control electrode via a control signal provided by the driver circuit in response to an input signal received by the driver circuit to drive the power transistor to an on state; and

driving the control electrode via the control signal to drive the power transistor in such a manner that a voltage drop across the load path of the power transistor is driven higher than a first threshold value in response to the supply voltage falling below the first threshold value, wherein the first threshold value is greater than a minimum value of the supply voltage required for proper operation of the driver circuit.

21. The method of claim 20, comprising driving the control electrode via the control signal to drive the power transistor from the on state to a partially on state so as to reduce a conductivity of the load path and drive the voltage drop across the load path higher when the supply voltage falls below the first threshold value.

22. The method of claim 21, comprising driving the control electrode via the control signal to drive the power transistor the an off state when the supply voltage falls below a second threshold value.

23. The method of claim 22, comprising driving the control electrode via the control signal to increase the voltage drop across the load path for a predefined amount of time.

24. The method of claim 23, comprising reducing a voltage level of the control signal applied to the control electrode by a predefined amount.