Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof

• US 8,642,246 B2
• Filed: 08/14/2007
• Issued: 02/04/2014
• Est. Priority Date: 02/26/2007
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Kennedy, Joseph, Xie, Songyuan, Do, Kim, Mukhopadhyay, Sudip
• Primary Examiner(s): CHU, JOHN S Y
• Application Number:
  US11/838,854
• Publication Number:
  US 20080206690A1
• Time in Patent Office: 2,366 Days
• Field of Search: 430/270.1, 430/512, 430/287.1, 430/272.1, 528/32, 528/43
• US Class Current: 430/272.1
• CPC Class Codes: C08G 77/20 containing silicon bound to unsaturated aliphatic groups C08G77/045 takes precedence
• CPC Class Codes: C08G 77/70 Siloxanes defined by use of the MDTQ nomenclature
• CPC Class Codes: C08L 2666/44 Silicon-containing compounds
• CPC Class Codes: C08L 83/04 Polysiloxanes
• CPC Class Codes: C08L 83/06 containing silicon bound to oxygen-containing groups C08L83/12 takes precedence
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds

Abstract

Compositions for use in tri-layer applications are described herein, wherein the composition has a matrix and includes: a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, at least one condensation catalyst, and at least one solvent. Tri-layer structures are also contemplated herein that comprise an organic underlayer (first layer), antireflective compositions and/or films contemplated herein (second layer) and a photoresist material (third layer) that are coupled to one another. Methods of producing a composition for tri-layer patterning applications includes: providing a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, providing at least one condensation catalyst, providing at least one solvent, providing at least one pH modifier, blending the formulated polymer and part of the at least one solvent in a reaction vessel to form a reactive mixture; and incorporating the at least one pH modifier, the at least one condensation catalyst and the remaining at least one solvent into the reactive mixture to form the composition.

Claims

1. A composition for use in tri-layer applications, the composition having a matrix and comprising:

a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups substituent to the matrix of the polymer, and a plurality of phenyl groups substituent to the matrix of the polymer,

at least one heat-activated condensation catalyst, and

at least one solvent, wherein a cured film formed from the composition has a high etch selectivity as compared with an adjacent film.

2. The composition of claim 1, wherein the at least one type of silicon-based moiety comprises at least one high ratio inorganic compound, at least one absorbing compound, at least one adhesion promoter or a combination thereof.

3. The composition of claim 1, wherein the at least one type of silicon-based moiety comprises at least one alkoxy moiety.

4. The composition of claim 3, wherein the at least one alkoxy moiety comprise tetraethoxysilane, phenyltriethoxysilane, vinyltriethoxysilane or a combination thereof.

5. The composition of claim 1, wherein the polymer comprises at least 30 weight percent of silicon.

6. The composition of claim 5, wherein the polymer comprises at least 40 weight percent of silicon.

7. The composition of claim 1, wherein at least part of the plurality of vinyl groups come from vinyltriethoxysilane.

8. The composition of claim 1, wherein at least part of the plurality of phenyl groups come from phenyltriethoxysilane.

9. The composition of claim 1, further comprising at least one additional adhesion promoter.

10. The composition of claim 1, further comprising at least one absorbing compound.

11. The composition of claim 9, wherein the at least one additional adhesion promoter comprises a base.

12. The composition of claim 11, wherein the at least one adhesion promoter comprises nitrogen.

13. The composition of claim 11, wherein the at least one adhesion promoter comprises phosphorus.

14. The composition of claim 12, wherein the at least one adhesion promoter comprises an amine base.

15. The composition of claim 14, wherein the at least one adhesion promoter comprises ammonium, pyridine, aniline, TMAH, CTAH, TBAH, APTEOS or a combination thereof.

16. The composition of claim 12, wherein the at least one adhesion promoter comprises at least one amine salt.

17. The composition of claim 16, wherein the at least one amine salt comprises a weak acid/strong base or a strong acid/weak base.

18. The composition of claim 11, the at least one adhesion promoter comprises a neutral compound.

19. The composition of claim 11, wherein the at least one condensation catalyst comprises at least one amine salt.

20. The composition of claim 19, wherein the at least one amine salt comprises TMAN.

21. The composition of claim 1, further comprising at least one pH modifier.

22. The composition of claim 21, wherein the at least one pH modifier comprises an acid.

23. The composition of claim 22, wherein the acid comprises nitric acid.

24. The composition of claim 1, wherein the at least one solvent comprises PGMEA, ethanol, butanol, water or a combination thereof.