Manufacturing method of semiconductor device
First Claim
1. A manufacturing method of a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer over a substrate;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode over the gate insulating layer;
forming a source region and a drain region in regions of the oxide semiconductor layer by using the gate electrode as a mask;
forming a protective insulating layer over the oxide semiconductor layer and the gate electrode;
forming openings in regions overlapping with the source region and the drain region of the protective insulating layer; and
performing plasma treatment using a gas including a halogen element on the source region and the drain region of the oxide semiconductor layer.
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Accused Products
Abstract
An object is to provide a manufacturing method of a semiconductor device having a high field effect mobility and including an oxide semiconductor layer in a semiconductor device including an oxide semiconductor. Another object is to provide a manufacturing method of a semiconductor device capable of high speed operation. An oxide semiconductor layer is terminated by a halogen element, and thus an increase in the contact resistance between the oxide semiconductor layer and a conductive layer in contact with the oxide semiconductor layer is suppressed. Therefore, the contact resistance between the oxide semiconductor layer and the conductive layer becomes favorable and a transistor having a high field effect mobility can be manufactured.
132 Citations
8 Claims
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1. A manufacturing method of a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over a substrate; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode over the gate insulating layer; forming a source region and a drain region in regions of the oxide semiconductor layer by using the gate electrode as a mask; forming a protective insulating layer over the oxide semiconductor layer and the gate electrode; forming openings in regions overlapping with the source region and the drain region of the protective insulating layer; and performing plasma treatment using a gas including a halogen element on the source region and the drain region of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4)
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5. A manufacturing method of a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over a substrate; and performing plasma treatment using a gas including a halogen element on the oxide semiconductor layer. - View Dependent Claims (6, 7, 8)
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Specification