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Manufacturing method of semiconductor device

  • US 8,642,380 B2
  • Filed: 06/22/2011
  • Issued: 02/04/2014
  • Est. Priority Date: 07/02/2010
  • Status: Expired due to Fees
First Claim
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1. A manufacturing method of a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer over a substrate;

    forming a gate insulating layer over the oxide semiconductor layer;

    forming a gate electrode over the gate insulating layer;

    forming a source region and a drain region in regions of the oxide semiconductor layer by using the gate electrode as a mask;

    forming a protective insulating layer over the oxide semiconductor layer and the gate electrode;

    forming openings in regions overlapping with the source region and the drain region of the protective insulating layer; and

    performing plasma treatment using a gas including a halogen element on the source region and the drain region of the oxide semiconductor layer.

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