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Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device

  • US 8,642,402 B2
  • Filed: 02/06/2008
  • Issued: 02/04/2014
  • Est. Priority Date: 02/09/2007
  • Status: Active Grant
First Claim
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1. A method for producing a thin film transistor comprising the steps of:

  • a film-forming step in which an amorphous oxide film is formed as a channel layer;

    a patterning step in which said amorphous oxide film is patterned by etching; and

    a crystallization step in which said amorphous oxide film which is patterned in the patterning step is crystallized, resulting in the amorphous oxide film being converted to a crystalline oxide semiconductor film,wherein said crystallized crystalline oxide semiconductor film is provides a channel layer;

    said crystalline oxide semiconductor film contains In and a positive divalent element;

    said positive divalent element is one or more elements selected from Zn, Mg, Cu, Co, Ni and Ca; and

    an atomic ratio of the In [In] and the positive divalent element [X] by the formula [X]/([X]+[In]) is such that 0.0001≦

    [X]/([X]+[In])≦

    0.5.

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