×

Wide and deep oxide trench in a semiconductor substrate with interspersed vertical oxide ribs

  • US 8,642,429 B2
  • Filed: 06/29/2012
  • Issued: 02/04/2014
  • Est. Priority Date: 12/15/2009
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a large deep oxide trench in a semiconductor substrate comprising:

  • a) forming, in the semiconductor substrate, a plurality of interim trenches separated by a corresponding number of remaining semiconductor mesas between the interim trenches;

    b) oxidizing the remaining semiconductor mesas until they are substantially converted to oxide by thermal oxidation; and

    c) filling up any remaining spaces of the interim trenches with insulating material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×