Semiconductor device

• US 8,643,007 B2
• Filed: 02/16/2012
• Issued: 02/04/2014
• Est. Priority Date: 02/23/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nomura, Masumi, Noda, Kosei
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US13/397,838
• Publication Number:
  US 20120211744A1
• Time in Patent Office: 719 Days
• Field of Search: 257/43, 257/E29.273
• US Class Current: 257/43
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to reduce concentration of an electric field on an end of a drain electrode of a semiconductor device. A semiconductor device includes an oxide semiconductor film including a first region and a second region; a pair of electrodes which is partly in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode that overlaps with part of one of the pair of electrodes and the first region with the gate insulating film provided therebetween. At least part of the first region and part of the second region are between the pair of electrodes. The gate electrode does not overlap with the other of the pair of electrodes.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film including a first region and a second region;

a first electrode in contact with the oxide semiconductor film;

a second electrode in contact with the oxide semiconductor film;

a gate insulating film adjacent to the oxide semiconductor film; and

a gate electrode adjacent to the oxide semiconductor film with the gate insulating film therebetween,

wherein the gate electrode is closer to the first electrode than to the second electrode,

wherein the first region is overlapped with the gate electrode, and

wherein the second region is between the gate electrode and the second electrode.

2. The semiconductor device according to claim 1, wherein the second region is not overlapped with the gate electrode.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film includes a third region in contact with the second electrode, and wherein the second region is between the first region and the third region.

4. The semiconductor device according to claim 3, wherein an electric resistance of the second region is lower than an electric resistance of the third region.

5. The semiconductor device according to claim 1, wherein the gate electrode overlaps with part of the first electrode.

6. The semiconductor device according to claim 1, wherein an electric resistance of the second region is lower than an electric resistance of the first region.

7. The semiconductor device according to claim 1, wherein the first electrode is a source electrode and the second electrode is a drain electrode.

8. The semiconductor device according to claim 1, wherein the oxide semiconductor film contains two or more kinds of elements selected from In, Ga, Sn, and Zn.

9. The semiconductor device according to claim 1, wherein the second region contains one or more of elements selected from nitrogen, phosphorus, arsenic, and a rare gas at 1×

10¹⁷ atoms/cm³ or higher and 1×

10²² atoms/cm³ or lower.

10. The semiconductor device according to claim 1, wherein the oxide semiconductor film includes a crystal region in an amorphous phase.

11. The semiconductor device according to claim 1, wherein c-axes of the crystal region are aligned in a direction perpendicular to a top surface of the oxide semiconductor film.

12. A semiconductor device comprising:

an oxide semiconductor film including a first region and a second region;

a first electrode in contact with the oxide semiconductor film;

a second electrode in contact with the oxide semiconductor film;

a gate insulating film adjacent to the oxide semiconductor film; and

a gate electrode adjacent to the oxide semiconductor film with the gate insulating film therebetween,

wherein the gate insulating film is on and in contact with the oxide semiconductor film,

wherein the gate electrode is on and in contact with the gate insulating film,

wherein the gate electrode is closer to the first electrode than to the second electrode,

wherein the first region is overlapped with the gate electrode, and

wherein the second region is between the gate electrode and the second electrode.

13. The semiconductor device according to claim 12, wherein the second region is not overlapped with the gate electrode.

14. The semiconductor device according to claim 12, wherein the oxide semiconductor film includes a third region in contact with the second electrode, and wherein the second region is between the first region and the third region.

15. The semiconductor device according to claim 14, wherein an electric resistance of the second region is lower than an electric resistance of the third region.

16. The semiconductor device according to claim 12, wherein the gate electrode overlaps with part of the first electrode.

17. The semiconductor device according to claim 12, wherein an electric resistance of the second region is lower than an electric resistance of the first region.

18. The semiconductor device according to claim 12, wherein the first electrode is a source electrode and the second electrode is a drain electrode.

19. The semiconductor device according to claim 12, wherein the oxide semiconductor film contains two or more kinds of elements selected from In, Ga, Sn, and Zn.

20. The semiconductor device according to claim 12, wherein the second region contains one or more of elements selected from nitrogen, phosphorus, arsenic, and a rare gas at 1×

10¹⁷ atoms/cm³ or higher and 1×

10²² atoms/cm³ or lower.

21. The semiconductor device according to claim 12, wherein the oxide semiconductor film includes a crystal region in an amorphous phase.

22. The semiconductor device according to claim 12, wherein c-axes of the crystal region are aligned in a direction perpendicular to a top surface of the oxide semiconductor film.

23. A semiconductor device comprising:

an oxide semiconductor film including a first region and a second region;

a first electrode in contact with the oxide semiconductor film;

a second electrode in contact with the oxide semiconductor film;

a gate insulating film adjacent to the oxide semiconductor film; and

a gate electrode adjacent to the oxide semiconductor film with the gate insulating film therebetween,

wherein the gate insulating film is on and in contact with the gate electrode,

wherein the oxide semiconductor film is on and in contact with the gate insulating film,

wherein the gate electrode is closer to the first electrode than to the second electrode,

wherein the first region is overlapped with the gate electrode, and

wherein the second region is between the gate electrode and the second electrode.

24. The semiconductor device according to claim 23, wherein the second region is not overlapped with the gate electrode.

25. The semiconductor device according to claim 23, wherein the oxide semiconductor film includes a third region in contact with the second electrode, and wherein the second region is between the first region and the third region.

26. The semiconductor device according to claim 25, wherein an electric resistance of the second region is lower than an electric resistance of the third region.

27. The semiconductor device according to claim 23, wherein the gate electrode overlaps with part of the first electrode.

28. The semiconductor device according to claim 23, wherein an electric resistance of the second region is lower than an electric resistance of the first region.

29. The semiconductor device according to claim 23, wherein the first electrode is a source electrode and the second electrode is a drain electrode.

30. The semiconductor device according to claim 23, wherein the oxide semiconductor film contains two or more kinds of elements selected from In, Ga, Sn, and Zn.

31. The semiconductor device according to claim 23, wherein the second region contains one or more of elements selected from nitrogen, phosphorus, arsenic, and a rare gas at 1×

10¹⁷ atoms/cm³ or higher and 1×

10²² atoms/cm³ or lower.

32. The semiconductor device according to claim 23, wherein the oxide semiconductor film includes a crystal region in an amorphous phase.

33. The semiconductor device according to claim 23, wherein c-axes of the crystal region are aligned in a direction perpendicular to a top surface of the oxide semiconductor film.