Semiconductor device including multiple insulating films

• US 8,643,021 B2
• Filed: 02/13/2012
• Issued: 02/04/2014
• Est. Priority Date: 04/15/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Murakami, Satoshi, Hayakawa, Masahiko, Kato, Kiyoshi, Osame, Mitsuaki, Hirosure, Takashi, Fujikawa, Saishi
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/371,524
• Publication Number:
  US 20120205658A1
• Time in Patent Office: 722 Days
• Field of Search: 257/57, 257/59, 257/66, 257/72, 257/291, 257/E29.117, 257/E29.137, 257/E29.151, 257/E29.202, 257/E29.273, 257/774, 257/775
• US Class Current: 257/72
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: Y10S 257/906 Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
• CPC Class Codes: Y10S 257/908 Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Abstract

A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

Claims

1. A semiconductor device comprising:

a first inorganic insulating film including a first contact hole;

an organic insulating film over the first inorganic insulating film, the organic insulating film including a second contact hole overlapping with the first contact hole, and

a second inorganic insulating film over the organic insulating film, the second inorganic insulating film including a third contact hole overlapping with the first contact hole and the second contact hole,

wherein the first contact hole is surrounded by the second contact hole, and

wherein the third contact hole is surrounded by the second contact hole, and

wherein a center of the first contact hole is off a center of the second contact hole, and

wherein a center of the third contact hole is off the center of the second contact hole.

2. The semiconductor device according to claim 1, wherein a side wall of the second contact hole has a curved surface.

3. The semiconductor device according to claim 1, wherein the organic insulating film comprises a photosensitive resin.

4. The semiconductor device according to claim 1, wherein the first contact hole is coaxially arranged with the third contact hole.

5. The semiconductor device according to claim 1, wherein the first inorganic insulating film and the second inorganic insulating film are contact with each other in the second contact hole.

6. A semiconductor device comprising:

a first inorganic insulating film including a first contact hole;

an organic insulating film over the first inorganic insulating film, the organic insulating film including a second contact hole overlapping with the first contact hole,

a second inorganic insulating film over the organic insulating film, the second inorganic insulating film including a third contact hole overlapping with the first contact hole and the second contact hole,

wherein the first contact hole is surrounded by the second contact hole, and

wherein the third contact hole is surrounded by the second contact hole, and

wherein the second contact hole includes a first bottom edge and a second bottom edge, and a distance between the first contact hole and the first bottom edge is different from a distance between the first contact hole and the second bottom edge, and

wherein a distance between the third contact hole and the first bottom edge is different from a distance between the third contact hole and the second bottom edge.

7. The semiconductor device according to claim 6,

wherein the first bottom edge is opposed to the second bottom edge, and

wherein the second contact hole includes a third bottom edge between the first bottom edge and the second bottom edge, and a distance between the first contact hole and the third bottom edge is larger than the distance between the first contact hole and the first bottom edge and shorter than the distance between the first contact hole and the second bottom edge.

8. The semiconductor device according to claim 7, wherein a side wall of the second contact hole has a curved surface.

9. The semiconductor device according to claim 6, wherein the first contact hole is coaxially arranged with the third contact hole.

10. The semiconductor device according to claim 6, wherein the first inorganic insulating film and the second inorganic insulating film are contact with each other in the second contact hole.

11. A semiconductor device comprising:

a thin film transistor;

a first inorganic insulating film over the thin film transistor, the first inorganic insulating film including a first contact hole;

a organic insulating film over the first inorganic insulating film, the organic insulating film including a second contact hole overlapping with the first contact hole;

a second inorganic insulating film over the organic insulating film, the second inorganic insulating film including a third contact hole overlapping with the first contact hole and the second contact hole; and

a conductive layer over the second inorganic insulating film, the conductive layer being in electrical contact with the thin film transistor through the first contact hole, the second contact hole and the third contact hole,

wherein the first contact hole is surrounded by the second contact hole,

wherein the third contact hole is surrounded by the second contact hole,

wherein a center of the first contact hole is off a center of the second contact hole, and

wherein a center of the third contact hole is off the center of the second contact hole.

12. The semiconductor device according to claim 11, wherein a side wall of the second contact hole has a curved surface.

13. The semiconductor device according to claim 11, wherein the first contact hole is coaxially arranged with the third contact hole.

14. The semiconductor device according to claim 11, wherein the first inorganic insulating film and the second inorganic insulating film are contact with each other in the second contact hole.

15. A semiconductor device comprising:

a thin film transistor;

a first inorganic insulating film over the thin film transistor, the first inorganic insulating film including a first contact hole;

a organic insulating film over the first inorganic insulating film, the organic insulating film including a second contact hole overlapping with the first contact hole;

a second inorganic insulating film over the organic insulating film, the second inorganic insulating film including a third contact hole overlapping with the first contact hole and the second contact hole; and

a conductive layer over the second inorganic insulating film, the conductive layer being in electrical contact with the thin film transistor through the first contact hole, the second contact hole and the third contact hole,

wherein the first contact hole is surrounded by the second contact hole, and

wherein the third contact hole is surrounded by the second contact hole, and

wherein the second contact hole includes a first bottom edge and a second bottom edge, and a distance between the first contact hole and the first bottom edge is different from a distance between the first contact hole and the second bottom edge.

16. The semiconductor device according to claim 15,

wherein the first bottom edge is opposed to the second bottom edge, and

wherein the second contact hole includes a third bottom edge between the first bottom edge and the second bottom edge, and a distance between the first contact hole and the third bottom edge is larger than the distance between the first contact hole and the first bottom edge and shorter than the distance between the first contact hole and the second bottom edge.

17. The semiconductor device according to claim 15, wherein a side wall of the second contact hole has a curved surface.

18. The semiconductor device according to claim 15, wherein the semiconductor device is a display device.

19. The semiconductor device according to claim 15, wherein the first contact hole is coaxially arranged with the third contact hole.

20. The semiconductor device according to claim 15, wherein the first inorganic insulating film and the second inorganic insulating film are contact with each other in the second contact hole.