In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
First Claim
Patent Images
1. A device structure, comprising:
- a nanomask with openings on a nanometer scale; and
a III-nitride crystal grown on or above the nanomask, wherein;
the III-nitride crystal is a semi-polar or non-polar oriented III-nitride or AlxGayIn(1-x-y)N crystal, andthe III-nitride crystal has a reduced defect density as compared to a III-nitride crystal grown without the nanomask layer.
0 Assignments
0 Petitions
Accused Products
Abstract
A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
26 Citations
32 Claims
-
1. A device structure, comprising:
-
a nanomask with openings on a nanometer scale; and a III-nitride crystal grown on or above the nanomask, wherein; the III-nitride crystal is a semi-polar or non-polar oriented III-nitride or AlxGayIn(1-x-y)N crystal, and the III-nitride crystal has a reduced defect density as compared to a III-nitride crystal grown without the nanomask layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
-
2. A device structure, comprising:
-
a nanomask with openings on a nanometer scale; and a III-nitride crystal grown on or above the nanomask, wherein; the III-nitride crystal is a non-polar oriented III-nitride or AlxGayIn(1-x-y)N crystal, and the III-nitride crystal has a threading dislocation density less than 9×
109 cm−
2.
-
-
25. A method of fabricating a III-nitride crystal, comprising:
-
growing, on a substrate, a nanomask with openings on a nanometer scale; and growing a III-nitride crystal on or above the nanomask, wherein; the III-nitride crystal is a non-polar or semi-polar oriented III-nitride or AlxGayIn(1-x-y)N crystal, and the III-nitride crystal is grown through the openings and laterally over the nanomask to form the III-nitride crystal comprising a lateral epitaxial overgrowth. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
-
Specification