Light emitting device and method of manufacturing the same
First Claim
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1. A light emitting device, comprising:
- a conductive substrate;
a nitride semiconductor layer formed on the conductive substrate, the nitride semiconductor layer including a second semiconductor layer on the conductive substrate, an active layer on the second semiconductor layer, and a first semiconductor layer on the active layer;
a light extraction structure grown on the first semiconductor layer, wherein a portion of the first semiconductor layer is free of the light extraction structure; and
a first electrode located on the portion of the first semiconductor layer that is free of the light extraction structure.
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Abstract
A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
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Citations
27 Claims
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1. A light emitting device, comprising:
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a conductive substrate; a nitride semiconductor layer formed on the conductive substrate, the nitride semiconductor layer including a second semiconductor layer on the conductive substrate, an active layer on the second semiconductor layer, and a first semiconductor layer on the active layer; a light extraction structure grown on the first semiconductor layer, wherein a portion of the first semiconductor layer is free of the light extraction structure; and a first electrode located on the portion of the first semiconductor layer that is free of the light extraction structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 21, 22, 23, 24)
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15. A light emitting device, comprising:
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a conductive substrate; a nitride semiconductor layer formed on the conductive substrate, the nitride semiconductor layer including a second semiconductor layer on the conductive substrate, an active layer on the second semiconductor layer, and a first semiconductor layer on the active layer; a light extraction structure grown on a first portion of first semiconductor layer; and a first electrode located on a second portion of the first semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20, 25, 26, 27)
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Specification