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Semiconductor light-emitting device

  • US 8,643,036 B2
  • Filed: 07/16/2012
  • Issued: 02/04/2014
  • Est. Priority Date: 02/09/2005
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a semiconductor light emitting device, comprising:

  • selectively texturing a surface of a layer in order to produce light emissions at two or more peak wavelengths from different locations on the selectively textured surface; and

    incorporating varying fractions of indium at the different locations on the selectively textured surface by depositing one or more indium-containing light-emitting Group-III nitride layers on or above the selectively textured surface, wherein the one or more indium-containing light-emitting Group-III nitride layers incorporate the varying fractions of indium depending on a position on the selectively textured surface, with a higher incorporation of indium at a top of a pillar on the surface, as compared to a lower incorporation of indium in a valley between pillars on the surface, and an intermediate incorporation of indium on side-walls of the pillars.

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