Suspended beam for use in MEMS device

• US 8,643,140 B2
• Filed: 07/11/2011
• Issued: 02/04/2014
• Est. Priority Date: 07/11/2011
• Status: Expired due to Fees

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Yang, Chin-Sheng
• Primary Examiner(s): Sofocleous, Alexander
• Assistant Examiner(s): Singal, Ankush
• Application Number:
  US13/179,608
• Publication Number:
  US 20130015556A1
• Time in Patent Office: 939 Days
• Field of Search: 438 48- 55, 438125-127, 438/723, 257/532, 257/214, 257/421, 257/422, 257/414, 257/415
• US Class Current: 257/532
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes

Abstract

A suspended beam includes a substrate, a main body and a first metal line structure. A first end of the main body is fixed onto the substrate. A second end of the main body is suspended. The first metal line structure is embedded in the main body. The width of the first metal line structure is smaller than the width of the main body.

Claims

1. A suspended beam, comprising:

a substrate;

a main body, wherein a first end of the main body is fixed onto the substrate, and a second end of the main body is suspended; and

a first metal line structure embedded in the main body and enclosing a portion of the main body, wherein the first metal line structure has a width smaller than a width of the main body.

2. The suspended beam according to claim 1, wherein the substrate is a silicon substrate.

3. The suspended beam according to claim 1, wherein the main body is constituted by a dielectric layer or a multi-layered structure including two or more dielectric layers.

4. The suspended beam according to claim 3, wherein the dielectric layer is made of silicon oxide.

5. The suspended beam according to claim 1, wherein the first metal line structure is embedded in a periphery of a top surface of the main body and exposed outside the main body.

6. The suspended beam according to claim 1, further comprising a second metal line structure, wherein the second metal line structure is embedded in the main body, and electrically connected with the first metal line structure through at least one contact hole conductor.

7. The suspended beam according to claim 1, wherein the first metal line structure is embedded within the main body and not exposed to the main body.

8. The suspended beam according to claim 1, wherein the first metal line structure encloses the portion of the main body with a substantially identical width thereof vertical to a direction extended by the first metal line structure.

9. A circuit chip, comprising:

a substrate;

an integrated circuit device formed over the substrate, and comprising a multi-layered structure; and

a microelectromechanical systems (MEMS) zone formed over the substrate, and at least comprising a suspended beam, wherein the suspended beam comprises;

a main body, wherein a first end of the main body is fixed onto the substrate, and a second end of the main body is suspended; and

a first metal line structure embedded in the main body and enclosing a portion of the main body, wherein the width of the first metal line structure is smaller than a width of the main body.

10. The circuit chip according to claim 9, wherein the main body of the suspended beam is constituted by a dielectric layer or a multi-layered structure including two or more dielectric layers.

11. The circuit chip according to claim 9, wherein the first metal line structure is embedded in a periphery of a top surface of the main body and exposed outside the main body.

12. The circuit chip according to claim 9, further comprising a second metal line structure, wherein the second metal line structure is embedded in the main body, and electrically connected with the first metal line structure through at least one contact hole conductor.

13. The circuit chip according to claim 9, wherein the suspended beam is a part of a capacitor.

14. The circuit chip according to claim 9, wherein the first metal line structure is made of copper, aluminum or tungsten.

15. The circuit chip according to claim 9, wherein the first metal line structure is embedded within the main body and not exposed to the main body.

16. The circuit chip according to claim 9, wherein the first metal line structure encloses the portion of the main body with a substantially identical width vertical to a direction extended by the first metal line structure.