High voltage and high power boost converter with co-packaged Schottky diode
First Claim
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1. A boost converter comprising:
- a boost converter integrated circuit; and
a vertical discrete Schottky diode disposed on a semiconductor die having a top anode and a bottom cathode, wherein the boost converter integrated circuit and the vertical discrete Schottky diode are co-packaged on a common die pad, and wherein the bottom cathode is electrically connected to the common die pad.
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Abstract
A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. The bottom cathode is electrically connected to the common die pad. It is emphasized that this abstract is being provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
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Citations
10 Claims
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1. A boost converter comprising:
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a boost converter integrated circuit; and a vertical discrete Schottky diode disposed on a semiconductor die having a top anode and a bottom cathode, wherein the boost converter integrated circuit and the vertical discrete Schottky diode are co-packaged on a common die pad, and wherein the bottom cathode is electrically connected to the common die pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification