Method of making a semiconductor device having a multicomponent oxide
First Claim
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1. A method of forming a channel, comprising:
- providing at least one precursor composition that includes a plurality of precursor compounds, wherein the precursor compounds comprise indium, gallium, and zinc oxides; and
depositing the channel including the precursor composition to form a multicomponent from the precursor composition to electrically couple a drain electrode and a source electrode.
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Abstract
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
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Citations
20 Claims
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1. A method of forming a channel, comprising:
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providing at least one precursor composition that includes a plurality of precursor compounds, wherein the precursor compounds comprise indium, gallium, and zinc oxides; and depositing the channel including the precursor composition to form a multicomponent from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a channel, comprising:
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providing at least one precursor composition that includes indium, gallium, and zinc oxides; and depositing the channel including the precursor composition to form an indium-gallium-zinc metal oxide from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (10, 11, 12, 13)
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14. A method of forming a channel, comprising:
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forming a drain electrode; forming a source electrode; and forming a channel, configured to electrically couple the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula AxBxCxOx, from a precursor composition that includes one or more precursor compounds that include Ax, one or more precursor compounds that include Bx, and one or more precursor compounds that include Cx wherein A is In, B is Ga, C is Zn, O is atomic oxygen, and wherein each x is independently a non-zero integer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification