Thin film transistor and fabricating method thereof
First Claim
Patent Images
1. A thin film transistor comprising:
- a gate;
a gate insulator covering the gate;
an oxide semiconductor channel layer configured on the gate insulator and located above the gate, the oxide semiconductor channel layer comprising a first sub-layer and a second sub-layer located on the first sub-layer, an oxygen content of the first sub-layer being lower than an oxygen content of the second sub-layer, wherein the first sub-layer has a first tapered sidewall, the second sub-layer has a second tapered sidewall, and the second tapered sidewall is steeper than the first tapered sidewall; and
a source and a drain configured on a portion of the second sub-layer.
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Abstract
A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided.
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Citations
15 Claims
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1. A thin film transistor comprising:
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a gate; a gate insulator covering the gate; an oxide semiconductor channel layer configured on the gate insulator and located above the gate, the oxide semiconductor channel layer comprising a first sub-layer and a second sub-layer located on the first sub-layer, an oxygen content of the first sub-layer being lower than an oxygen content of the second sub-layer, wherein the first sub-layer has a first tapered sidewall, the second sub-layer has a second tapered sidewall, and the second tapered sidewall is steeper than the first tapered sidewall; and a source and a drain configured on a portion of the second sub-layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 15)
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8. A thin film transistor comprising:
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a gate; a gate insulator covering the gate; an oxide semiconductor channel layer configured on the gate insulator and located above the gate, the oxide semiconductor channel layer being a single film layer and having a first portion and a second portion, the first portion being located between the second portion and the gate insulator, a crystallite size of the first portion being greater than a crystallite size of the second portion; and a source and a drain configured on the oxide semiconductor channel layer.
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9. A fabricating method of a thin film transistor, comprising:
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forming a gate on a substrate; forming a gate insulator on the substrate to cover the gate; sequentially forming a first sub-layer and a second sub-layer on the gate insulator located above the gate, wherein an oxygen content of the first sub-layer is lower than that of the second sub-layer, wherein the first sub-layer has a first tapered sidewall, the second sub-layer has a second tapered sidewall, and the second tapered sidewall is steeper than the first tapered sidewall; and forming a source and a drain on a portion of the second sub-layer. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification