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Thin film transistor and fabricating method thereof

  • US 8,647,934 B2
  • Filed: 04/29/2011
  • Issued: 02/11/2014
  • Est. Priority Date: 12/30/2010
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising:

  • a gate;

    a gate insulator covering the gate;

    an oxide semiconductor channel layer configured on the gate insulator and located above the gate, the oxide semiconductor channel layer comprising a first sub-layer and a second sub-layer located on the first sub-layer, an oxygen content of the first sub-layer being lower than an oxygen content of the second sub-layer, wherein the first sub-layer has a first tapered sidewall, the second sub-layer has a second tapered sidewall, and the second tapered sidewall is steeper than the first tapered sidewall; and

    a source and a drain configured on a portion of the second sub-layer.

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