×

Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levels

  • US 8,647,937 B2
  • Filed: 06/26/2012
  • Issued: 02/11/2014
  • Est. Priority Date: 06/26/2012
  • Status: Active Grant
First Claim
Patent Images

1. A method comprising:

  • forming a dummy gate, on a substrate, between a pair of spacers;

    forming, in the substrate, a source and drain separated by a ground plane layer;

    removing the dummy gate from the substrate, forming a cavity between the pair of spacers;

    forming, after removal of the dummy gate, a channel layer on the substrate;

    forming a high-k layer on the channel layer and on side surfaces of the cavity; and

    forming a replacement gate in the cavity.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×