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Wafer level packaging bond

  • US 8,647,962 B2
  • Filed: 03/23/2010
  • Issued: 02/11/2014
  • Est. Priority Date: 03/23/2010
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a first semiconductor device on a first substrate;

    forming a first layer on the first substrate, wherein the first layer is amorphous silicon;

    forming a second semiconductor device on a second substrate;

    forming a second layer on the second substrate, wherein the second layer is aluminum; and

    bonding the first layer and the second layer to create an interface between amorphous silicon and aluminum, wherein the interface provides an electrical connection between the first substrate and the second substrate.

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