Wafer level packaging bond
First Claim
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1. A method, comprising:
- forming a first semiconductor device on a first substrate;
forming a first layer on the first substrate, wherein the first layer is amorphous silicon;
forming a second semiconductor device on a second substrate;
forming a second layer on the second substrate, wherein the second layer is aluminum; and
bonding the first layer and the second layer to create an interface between amorphous silicon and aluminum, wherein the interface provides an electrical connection between the first substrate and the second substrate.
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Abstract
The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum.
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Citations
13 Claims
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1. A method, comprising:
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forming a first semiconductor device on a first substrate; forming a first layer on the first substrate, wherein the first layer is amorphous silicon; forming a second semiconductor device on a second substrate; forming a second layer on the second substrate, wherein the second layer is aluminum; and bonding the first layer and the second layer to create an interface between amorphous silicon and aluminum, wherein the interface provides an electrical connection between the first substrate and the second substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a semiconductor device, comprising:
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forming a micro-electro-mechanical systems (MEMS) device, disposed on a first substrate; forming an integrated circuit disposed on a second substrate; and bonding the first substrate and the second substrate, wherein the bond includes a first interface between a first bonding layer of amorphous silicon and a second bonding layer including aluminum, wherein the MEMS device and the integrated circuit are electrically connected by the first interface, and wherein the bonding the first interface provides an edge of a hermetically sealed cavity. - View Dependent Claims (8, 9, 10)
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11. A method, comprising:
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providing a first substrate including a first bonding layer, wherein the first bonding layer is amorphous silicon; providing a second substrate including a second bonding layer, wherein the second bonding layer is aluminum, and wherein the second bonding layer is one layer of a multi-layer interconnect (MLI) of an integrated circuit; and bonding the first substrate and the second substrate, wherein the bonding includes forming a bond region having an interface between the amorphous silicon of the first bonding layer and the aluminum of the second bonding layer. - View Dependent Claims (12, 13)
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Specification