Method for producing a semiconductor layer
First Claim
Patent Images
1. A method for producing a semiconductor including a semiconductor layer on a semiconductor substrate containing oxygen, comprising:
- producing crystal defects by implanting protons at least in a near-surface region of the semiconductor substrate, the semiconductor substrate having a concentration of oxygen between 3×
1017 cm−
3 and 1×
1018 cm−
3;
carrying out a first thermal process, wherein oxygen is taken up at the crystal defects to form oxygen precipitates;
epitaxially depositing the semiconductor layer over the near-surface region of the semiconductor substrate after the first thermal process; and
diffusing oxygen from the semiconductor substrate from a region of the semiconductor substrate that has no crystal defects in a direction of the crystal defects such that the oxygen is taken up at the crystal defects to form oxygen precipitates.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.
-
Citations
25 Claims
-
1. A method for producing a semiconductor including a semiconductor layer on a semiconductor substrate containing oxygen, comprising:
-
producing crystal defects by implanting protons at least in a near-surface region of the semiconductor substrate, the semiconductor substrate having a concentration of oxygen between 3×
1017 cm−
3 and 1×
1018 cm−
3;carrying out a first thermal process, wherein oxygen is taken up at the crystal defects to form oxygen precipitates; epitaxially depositing the semiconductor layer over the near-surface region of the semiconductor substrate after the first thermal process; and diffusing oxygen from the semiconductor substrate from a region of the semiconductor substrate that has no crystal defects in a direction of the crystal defects such that the oxygen is taken up at the crystal defects to form oxygen precipitates. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method for producing a semiconductor including a semiconductor layer on a semiconductor substrate containing oxygen, comprising:
-
producing crystal defects at least in a near-surface region of the semiconductor substrate by implanting protons into the semiconductor substrate, the semiconductor substrate having a concentration of oxygen between 3×
1017 cm−
3 and 1×
1018 cm−
3;carrying out a first thermal process in an inert atmosphere, wherein oxygen is taken up at the crystal defects to form oxygen precipitates; epitaxially depositing the semiconductor layer over the near-surface region of the semiconductor substrate after the first thermal process; and diffusing oxygen from the semiconductor substrate from a region of the semiconductor substrate that has no crystal defects in a direction of the crystal defects such that the oxygen is taken up at the crystal defects to form oxygen precipitates, wherein the protons at least partly penetrate through the semiconductor substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
-
-
22. A method of making a power semiconductor comprising:
-
providing a semiconductor substrate having a concentration of oxygen between 3×
1017 cm−
3 and 1×
1018 cm−
3;producing crystal defects by implanting protons at least in a near-surface region of the semiconductor substrate having the concentration of oxygen between 3×
1017 cm−
3 and 1×
1018 cm−
3;carrying out a first thermal process in an inert atmosphere, wherein the oxygen is taken up at the crystal defects to form oxygen precipitates; epitaxially depositing a semiconductor layer over the near-surface region of the semiconductor substrate after the first thermal process; diffusing oxygen from the semiconductor substrate from a region of the semiconductor substrate that has no crystal defects in a direction of the crystal defects such that the oxygen is taken up at the crystal defects to form oxygen precipitates; and producing the power semiconductor using the semiconductor layer and semiconductor substrate. - View Dependent Claims (23, 25)
-
-
24. A method for producing a semiconductor including a semiconductor layer on a semiconductor substrate containing oxygen, comprising:
-
producing crystal defects in an entirety of the semiconductor substrate by implanting protons into the semiconductor substrate; carrying out a first thermal process in an inert atmosphere, wherein the oxygen is taken up at the crystal defects to form oxygen precipitates; and epitaxially depositing the semiconductor layer directly over the semiconductor substrate after the first thermal process.
-
Specification