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Method for producing a semiconductor layer

  • US 8,647,968 B2
  • Filed: 06/10/2009
  • Issued: 02/11/2014
  • Est. Priority Date: 06/10/2008
  • Status: Active Grant
First Claim
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1. A method for producing a semiconductor including a semiconductor layer on a semiconductor substrate containing oxygen, comprising:

  • producing crystal defects by implanting protons at least in a near-surface region of the semiconductor substrate, the semiconductor substrate having a concentration of oxygen between 3×

    1017 cm

    3
    and 1×

    1018 cm

    3
    ;

    carrying out a first thermal process, wherein oxygen is taken up at the crystal defects to form oxygen precipitates;

    epitaxially depositing the semiconductor layer over the near-surface region of the semiconductor substrate after the first thermal process; and

    diffusing oxygen from the semiconductor substrate from a region of the semiconductor substrate that has no crystal defects in a direction of the crystal defects such that the oxygen is taken up at the crystal defects to form oxygen precipitates.

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