Semiconductor device, electronic device, and method of manufacturing semiconductor device
First Claim
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1. A semiconductor device comprising:
- a thin film transistor,wherein the thin film transistor comprises;
a first conductive layer;
an insulating layer over the first conductive layer;
a semiconductor layer over the insulating layer;
a second conductive layer over the semiconductor layer; and
a third conductive layer over the semiconductor layer,wherein the semiconductor layer comprises a region, wherein the region overlaps with the first conductive layer and does not overlap with the second conductive layer and the third conductive layer, andwherein the region meanders.
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Abstract
To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
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Citations
29 Claims
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1. A semiconductor device comprising:
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a thin film transistor, wherein the thin film transistor comprises; a first conductive layer; an insulating layer over the first conductive layer; a semiconductor layer over the insulating layer; a second conductive layer over the semiconductor layer; and a third conductive layer over the semiconductor layer, wherein the semiconductor layer comprises a region, wherein the region overlaps with the first conductive layer and does not overlap with the second conductive layer and the third conductive layer, and wherein the region meanders. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first conductive layer that extends to a first direction; a semiconductor layer adjacent to the first conductive layer; an insulating layer interposed between the first conductive layer and the semiconductor layer; a second conductive layer adjacent to the semiconductor layer, wherein the second conductive layer partially overlaps with the first conductive layer, and wherein the second conductive layer comprises a first convex portion that is oriented in a second direction intersecting with the first direction, a second convex portion that is oriented in a third direction intersecting with the first direction, and a third convex portion that is oriented in a fourth direction intersecting with the first direction; and a third conductive layer adjacent to the semiconductor layer, wherein the third conductive layer partially overlaps with the first conductive layer, and wherein the third conductive layer comprises a fourth convex portion that is oriented in a fifth direction intersecting with the first direction, a fifth convex portion that is oriented in a sixth direction intersecting with the first direction, and a sixth convex portion that is oriented in a seventh direction intersecting with the first direction, wherein the second convex portion is interposed between the fourth convex portion and the fifth convex portion, wherein the third convex portion is interposed between the fifth convex portion and the sixth convex portion, wherein the fourth convex portion is interposed between the first convex portion and the second convex portion, and wherein the fifth convex portion is interposed between the second convex portion and the third convex portion. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor device comprising:
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a thin film transistor, wherein the thin film transistor comprises; a gate electrode layer that extends to a first direction; a semiconductor layer over the gate electrode layer; a gate insulating layer interposed between the gate electrode layer and the semiconductor layer; a source electrode layer over the semiconductor layer, wherein the source electrode layer comprises a first convex portion that is oriented in a second direction perpendicular to the first direction, a second convex portion that is oriented in a third direction perpendicular to the first direction, and a third convex portion that is oriented in a fourth direction perpendicular to the first direction; and a drain electrode layer over the semiconductor layer, wherein the drain electrode layer comprises a fourth convex portion that is oriented in a fifth direction perpendicular to the first direction, a fifth convex portion that is oriented in a sixth direction perpendicular to the first direction, and a sixth convex portion that is oriented in a seventh direction perpendicular to the first direction, wherein the second convex portion is interposed between the fourth convex portion and the fifth convex portion, wherein the third convex portion is interposed between the fifth convex portion and the sixth convex portion, wherein the fourth convex portion is interposed between the first convex portion and the second convex portion, and wherein the fifth convex portion is interposed between the second convex portion and the third convex portion. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
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Specification