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Trench power field effect transistor device and method

  • US 8,648,412 B1
  • Filed: 06/04/2012
  • Issued: 02/11/2014
  • Est. Priority Date: 06/04/2012
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising the acts of:

  • providing a region of semiconductor material of a first conductivity type having a first major surface;

    forming a trench in the region of semiconductor material extending from the first major surface;

    forming an insulator layer adjacent sidewall surfaces of the trench;

    forming a control electrode in the trench and overlying a portion of the insulator layer;

    forming a body region of a second conductivity type within the region of semiconductor material, wherein the control electrode is configured to control a channel in the body region;

    forming a source region within the body region;

    forming a body contact structure extending from the major surface;

    forming an amorphized body region within the body region and connected to the body contact structure, wherein the act of forming the amorphized body region comprises a first ion implantation;

    forming a body contact region of a second conductivity type within the amorphized body region, wherein the act of forming the body contact region comprises a second ion implantation;

    annealing the body contact region; and

    forming a conductive region within the body contact structure extending from the major surface and contacting the body contact region.

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