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Tunneling transistors

  • US 8,648,426 B2
  • Filed: 12/17/2010
  • Issued: 02/11/2014
  • Est. Priority Date: 12/17/2010
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a source;

    a drain;

    a gate region, the gate region comprising;

    a gate;

    an island; and

    a gate oxide,wherein the gate oxide is positioned between the gate and the island; and

    the gate and island are electrically coactively coupled to each other; and

    a source barrier and a drain barrier,wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region, and wherein the source barrier and drain barrier are thinner proximate the island than they are proximate the gate.

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