Radio frequency module having an isolation mode between transmission mode and power saving mode

• US 8,649,741 B2
• Filed: 08/05/2011
• Issued: 02/11/2014
• Est. Priority Date: 09/14/2010
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Iijima, Masanori, Harasawa, Yoshiaki
• Primary Examiner(s): LE, THANH C
• Application Number:
  US13/204,400
• Publication Number:
  US 20120064952A1
• Time in Patent Office: 921 Days
• Field of Search: 455/78, 455/80, 455/82, 455/83, 455/550.1, 455/571, 455/572, 455/573, 455/127.1, 333/101, 333/102, 333/103
• US Class Current: 455/83
• CPC Class Codes: H03K 17/6221 combined with selecting means H03K17/6242 - H03K17/6285 take precedence

Abstract

A radio frequency module is configured to enter a power saving mode with high reliability. The radio frequency module includes, e.g., a first switch transistor for coupling a transmission node to an antenna, a second switch transistor for shunting the transmission node to a ground voltage, and a level shift circuit for performing on-off control of the first and second switch transistors by positive and negative power supply voltages. The level shift circuit, upon receiving a sleep instruction while the module is in a transmission operation mode in which the first switch transistor for coupling a transmission node to an antenna is turned on and the second switch transistor for shunting the transmission node to a ground voltage is turned off, first transitions to an isolation operation mode in which the first switch transistor for coupling a transmission node to an antenna is turned off and the second switch transistor for shunting the transmission node to a ground voltage is turned on for a first period of time, and then transitions to a sleep mode in which the positive and negative power supply voltages are deactivated.

Claims

1. A radio frequency module comprising:

a power amplifier circuit for amplifying a transmission radio frequency signal and outputting an amplified signal to a transmission node;

a first transistor for coupling the transmission node to an antenna;

a second transistor for shunting the transmission node to a first power supply voltage; and

first control circuitry which generates a second power supply voltage higher than the first power supply voltage and a third power supply voltage lower than the first power supply voltage and performs on-off control of the first and second transistors by applying a control signal having a value of the second power supply voltage or the third power supply voltage to the first and second transistors, wherein;

when a transmission operation mode is designated, the first control circuitry turns on the first transistor and turns off the second transistor, and

when a power saving operation mode is designated after the transmission operation mode, the first control circuitry turns off the first transistor and turns on the second transistor for a first time period and then stops generation of the second and third power supply voltages.

2. The radio frequency module according to claim 1,

wherein the first and second transistors are n-channel MIS transistors,

wherein the first power supply voltage is a ground voltage,

wherein the second power supply voltage is a positive power supply voltage, and

wherein the third power supply voltage is a negative power supply voltage.

3. The radio frequency module according to claim 2,

wherein the first control circuitry includes:

a first driver circuit which operates between the second power supply voltage and the first power supply voltage;

a second driver circuit which operates between the first power supply voltage and the third power supply voltage;

a first switch circuit which is inserted between an output node of the first driver circuit and a control input node of the first transistor and which is turned on when the first driver circuit outputs the second power supply voltage and turned off when the first driver circuit outputs the first power supply voltage;

a second switch circuit which is inserted between an output node of the second driver circuit and the control input node of the first transistor and which is turned on when the second driver circuit outputs the third power supply voltage and turned off when the second driver circuit outputs the first power supply voltage;

a third driver circuit which operates between the second power supply voltage and the first power supply voltage;

a fourth driver circuit which operates between the first power supply voltage and the third power supply voltage;

a third switch circuit which is inserted between an output node of the third driver circuit and a control input node of the second transistor and which is turned on when the third driver circuit outputs the second power supply voltage and turned off when the third driver circuit outputs the first power supply voltage; and

a fourth switch circuit which is inserted between an output node of the fourth driver circuit and the control input node of the second transistor and which is turned on when the fourth driver circuit outputs the third power supply voltage and turned off when the fourth driver circuit outputs the first power supply voltage.

4. The radio frequency module according to claim 2, wherein the first time period is less than 7 μ

s.

5. A radio frequency module comprising:

a power amplifier circuit for amplifying a transmission radio frequency signal and outputting an amplified signal to a transmission node;

a first transistor for coupling the transmission node to an antenna;

a second transistor for shunting the transmission node to a first power supply voltage;

a first power supply voltage generation circuit for generating a second power supply voltage higher than the first power supply voltage;

a second power supply voltage generation circuit for generating a third power supply voltage lower than the first power supply voltage;

a level shift circuit unit to which the second and third power supply voltages are supplied and which performs on-off control of the first and second transistors by applying a control signal having a value of the second power supply voltage or the third power supply voltage to the first and second transistors; and

a control circuit which switches a plurality of operation modes including a transmission operation mode, an isolation operation mode, and a power saving operation mode in accordance with an inputted first instruction and controls the level shift circuit unit and activation and deactivation of the first and second power supply voltage generation circuits in accordance with each operation mode,

wherein in the transmission operation mode, the control circuit activates the first and second power supply voltage generation circuits and the control circuit turns on the first transistor and turns off the second transistor through the level shift circuit unit,

wherein in the isolation operation mode, the control circuit activates the first and second power supply voltage generation circuits and the control circuit turns off the first transistor and turns on the second transistor through the level shift circuit unit,

wherein in the power saving operation mode, the control circuit deactivates the first and second power supply voltage generation circuits, and

wherein when transition from the transmission operation mode to the power saving operation mode is instructed by the first instruction, the control circuit performs the isolation operation mode during a first time period after the transmission operation mode and then transitions to the power saving operation mode.

6. The radio frequency module according to claim 5,

wherein the first and second transistors are n-channel MIS transistors,

wherein the first power supply voltage is a ground voltage,

wherein the second power supply voltage is a positive power supply voltage, and

wherein the third power supply voltage is a negative power supply voltage.

7. The radio frequency module according to claim 6, wherein the second power supply voltage generation circuit generates the third power supply voltage, using the second power supply voltage.

8. The radio frequency module according to claim 7,

wherein the control circuit includes:

a detection circuit for detecting the first instruction indicating transition to the power saving operation mode; and

a delay circuit for delaying a detection signal from the detection circuit by the first time period, and

wherein activation and deactivation of the first power supply voltage generation circuit is controlled based on an output signal from the delay circuit.

9. The radio frequency module according to claim 8, wherein the delay circuit sets the first time period using a time constant of a resistance and a capacitance.

10. The radio frequency module according to claim 8, wherein the first time period is less than 7 μ

s.

11. The radio frequency module according to claim 6,

wherein the level shift circuit unit includes:

a first driver circuit which operates between the second power supply voltage and the first power supply voltage;

a second driver circuit which operates between the first power supply voltage and the third power supply voltage;

a first switch circuit which is inserted between an output node of the first driver circuit and a control input node of the first transistor and which is turned on when the first driver circuit outputs the second power supply voltage and turned off when the first driver circuit outputs the first power supply voltage;

a second switch circuit which is inserted between an output node of the second driver circuit and the control input node of the first transistor and which is turned on when the second driver circuit outputs the third power supply voltage and turned off when the second driver circuit outputs the first power supply voltage;

a third driver circuit which operates between the second power supply voltage and the first power supply voltage;

a fourth driver circuit which operates between the first power supply voltage and the third power supply voltage,

a third switch circuit which is inserted between an output node of the third driver circuit and a control input node of the second transistor and which is turned on when the third driver circuit outputs the second power supply voltage and turned off when the third driver circuit outputs the first power supply voltage; and

a fourth switch circuit which is inserted between an output node of the fourth driver circuit and the control input node of the second transistor and which is turned on when the fourth driver circuit outputs the third power supply voltage and turned off when the fourth driver circuit outputs the first power supply voltage.

12. The radio frequency module according to claim 11,

wherein the first switch circuit is a p-channel MIS transistor having a gate to which the first power supply voltage is applied and a source coupled to an output node of the first driver circuit,

wherein the second switch circuit is an n-channel MIS transistor having a gate to which the first power supply voltage is applied and a source coupled to an output node of the second driver circuit,

wherein the third switch circuit is a p-channel MIS transistor having a gate to which the first power supply voltage is applied and a source coupled to an output node of the third driver circuit,

wherein the fourth switch circuit is an n-channel MIS transistor having a gate to which the first power supply voltage is applied and a source coupled to an output node of the fourth driver circuit,

wherein transistors configuring the first to fourth switch circuits have characteristics of an enhancement type, and

wherein the first and second transistors have characteristics of a depression type.

13. A radio frequency module comprising:

a wiring board;

a first semiconductor chip which is mounted over the wiring board; and

a second semiconductor chip which is mounted over the wiring board and formed of an SOI substrate,

wherein the first semiconductor chip includes;

a bias circuit for generating a bias;

a power amplifier circuit for amplifying an inputted transmission radio frequency signal with a gain corresponding to the bias and outputting an amplified signal to a transmission node;

a first power supply voltage generation circuit for generating a positive power supply voltage; and

a control circuit which switches a plurality of operation modes including a transmission operation mode, an isolation operation mode, and a power saving operation mode in accordance with an inputted first instruction, outputs a first control signal corresponding to each operation mode, and controls activation and deactivation of the first power supply voltage generation circuit,

wherein the second semiconductor chip includes;

a first transistor for coupling the transmission node to an antenna;

a second transistor for shunting the transmission node to a ground voltage;

a third transistor for sending a reception radio frequency signal received by the antenna to a reception node;

a fourth transistor for shunting the reception node to the ground voltage;

a second power supply voltage generation circuit for generating a negative power supply voltage, using the positive power supply voltage; and

a level shift circuit unit to which the positive power supply voltage and the negative power supply voltage are supplied and which performs on-off control of the first to fourth transistors by applying a second control signal having a value of the positive power supply voltage or the negative power supply voltage to the first to fourth transistors in accordance with the first control signal,

wherein in the transmission operation mode, the control circuit activates the first power supply voltage generation circuit and outputs the first control signal having first logic information,

wherein in the isolation operation mode, the control circuit activates the first power supply voltage generation circuit and outputs the first control signal having second logic information,

wherein in the power saving operation mode, the control circuit deactivates the first power supply voltage generation circuit and outputs the first control signal having third logic information,

wherein the level shift circuit unit turns on the first and fourth transistors and turns off the second and third transistors in accordance with the first logic information,

wherein the level shift circuit unit turns off the first and third transistors and turns on the second and fourth transistors in accordance with the second logic information, and

wherein when transition from the transmission operation mode to the power saving operation mode is instructed by the first instruction, the control circuit performs the isolation operation mode during a first time period after the transmission operation mode and then transitions to the power saving operation mode.

14. The radio frequency module according to claim 13, wherein when transition to the power saving operation mode is instructed by the first instruction, the bias circuit stops generation of the bias.

15. The radio frequency module according to claim 14,

wherein the first power supply voltage generation circuit generates the positive power supply voltage using an amplifier circuit of a negative-feedback configuration, and

wherein the second power supply voltage generation circuit generates the negative power supply voltage by storing electric charge in a first capacitor using a clock signal generated by the positive power supply voltage.

16. The radio frequency module according to claim 15,

wherein the control circuit includes:

a detection circuit for detecting the first instruction indicating transition to the power saving operation mode; and

a delay circuit for delaying a detection signal from the detection circuit by the first time period, and

wherein activation and deactivation of the first power supply voltage generation circuit is controlled based on an output signal from the delay circuit.

17. The radio frequency module according to claim 16, wherein the delay circuit sets the first time period using a time constant of a resistance and a capacitance.

18. The radio frequency module according to claim 14,

wherein the level shift circuit unit includes:

a first driver circuit which operates between the positive power supply voltage and the ground voltage;

a second driver circuit which operates between the ground voltage and the negative power supply voltage;

a first switch circuit which is inserted between an output node of the first driver circuit and a control input node of the first transistor and which is turned on when the first driver circuit outputs the positive power supply voltage and turned off when the first driver circuit outputs the ground voltage;

a second switch circuit which is inserted between an output node of the second driver circuit and the control input node of the first transistor and which is turned on when the second driver circuit outputs the negative power supply voltage and turned off when the second driver circuit outputs the ground voltage;

a third driver circuit which operates between the positive power supply voltage and the ground voltage;

a fourth driver circuit which operates between the ground voltage and the negative power supply voltage;

a third switch circuit which is inserted between an output node of the third driver circuit and a control input node of the second transistor and which is turned on when the third driver circuit outputs the positive power supply voltage and turned off when the third driver circuit outputs the ground voltage; and

a fourth switch circuit which is inserted between an output node of the fourth driver circuit and the control input node of the second transistor and which is turned on when the fourth driver circuit outputs the negative power supply voltage and turned off when the fourth driver circuit outputs the ground voltage.

19. The radio frequency module according to claim 18,

wherein the first switch circuit is a p-channel MIS transistor having a gate to which the ground voltage is applied and a source coupled to an output node of the first driver circuit,

wherein the second switch circuit is an n-channel MIS transistor having a gate to which the ground voltage is applied and a source coupled to an output node of the second driver circuit,

wherein the third switch circuit is a p-channel MIS transistor having a gate to which the ground voltage is applied and a source coupled to an output node of the third driver circuit,

wherein the fourth switch circuit is an n-channel MIS transistor having a gate to which the ground voltage is applied and a source coupled to an output node of the fourth driver circuit,

wherein transistors configuring the first to fourth switch circuits have characteristics of an enhancement type, and

wherein the first and second transistors are n-channel MIS transistors having characteristics of a depression type.

20. A radio frequency module configured enter a power saving operation mode from a transmission operation mode via an isolation operation mode in response to a first instruction, the radio frequency module comprising:

a transmission node;

a first transistor for coupling the transmission node to an antenna;

a second transistor for shunting the transmission node to a first power supply voltage; and

circuitry configured to;

when in the transmission operation mode, provide a second power supply voltage and a third power supply voltage and apply a control signal corresponding to the second power supply voltage or the third power supply voltage to each of the first and second transistors so as to turn on the first transistor and turn off the second transistor;

in response to a first instruction to enter the power saving mode from the transmission operation mode, turn off the first transistor and turn on the second transistor for a first predetermined period of time during an isolation operation mode; and

after the first predetermined period of time, discontinue providing the second and third power supply voltages.

21. The radio frequency module according to claim 20, wherein the circuitry includes a level shift circuit unit comprising:

first and second switch circuits configured to operate complementarily and having output ends connected to a control input node of the first transistor;

third and fourth switch circuits configured to operate complementarily and having output ends connected to a control input node of the second transistor.

22. The radio frequency module according to claim 21, wherein:

the level shift circuit unit further comprises;

first and second driver circuits having outputs coupled to input ends of respective first and second switch circuits; and

third and fourth driver circuits having outputs coupled to input ends of respective third and fourth switch circuits;

when in the transmission operation mode, the second power supply voltage is provided to the first and third driver circuits and the third power supply voltage is provided to the second and fourth driver circuit; and

after the first predetermined period of time, the second and third power supply voltages are no longer provided to any of the driver circuits.