Selective epitaxial germanium growth on silicon-trench fill and in situ doping

• US 8,652,951 B2
• Filed: 02/13/2013
• Issued: 02/18/2014
• Est. Priority Date: 02/13/2012
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Huang, Yi-Chiau, Li, Jiping, Jin, Miao, Wood, Bingxi Sun, Sanchez, Errol Antonio C., Kim, Yihwan
• Primary Examiner(s): Geyer, Scott B
• Application Number:
  US13/765,733
• Publication Number:
  US 20130210221A1
• Time in Patent Office: 370 Days
• Field of Search: None
• US Class Current: 438/509
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02694 Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Abstract

Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.

Claims

1. A method of processing a patterned silicon substrate, comprising:

depositing a germanium containing material in recesses of the patterned silicon substrate;

depositing an overburden of the germanium containing material of at least about 50% on the substrate; and

directing one or more laser pulses to the germanium containing material, wherein each laser pulse has energy sufficient to melt a portion of the overburden;

reflowing a surface of the germanium containing material to form a substantially flat surface; and

removing the overburden.

2. The method of claim 1, wherein each of the one or more laser pulses has a duration less than about 50 nsec.

3. The method of claim 2, wherein each of the laser pulses is formed from the radiation emitted by more than one laser.

4. The method of claim 3, wherein no more than about 80% of the overburden is melted.

5. The method of claim 4, wherein the overburden is removed by planarizing.

6. The method of claim 4, wherein the overburden is removed by etching.

7. The method of claim 3, wherein each pulse has a tailored temporal profile.

8. The method of claim 7, wherein no more than about 80% of the overburden is melted.

9. The method of claim 8, wherein the overburden is removed by planarizing.

10. The method of claim 8, wherein the overburden is removed by etching.

11. A method of processing a patterned silicon substrate comprising recesses, comprising:

growing a doped germanium material in the recesses by an epitaxial process;

growing a film of the doped germanium material on the substrate to form an overburden of at least about 50%;

reflowing portions of the doped germanium film by exposing the portions to pulsed laser energy; and

removing the overburden.

12. The method of claim 11, wherein the pulsed laser energy is formed by combining pulses from two or more lasers.

13. The method of claim 12, wherein each pulse of the pulsed laser energy has a duration less than about 50 nsec.

14. The method of claim 13, wherein each pulse delivers energy between about 0.1 J/cm² and about 0.5 J/cm².

15. The method of claim 14, wherein the overburden is removed by planarization.