Methods and structure for adapting MEMS structures to form electrical interconnections for integrated circuits
First Claim
1. A method for manufacturing a CMOS-MEMS integrated device, the method comprising:
- providing a CMOS integrated circuit device having a substrate and a metal conductor, the metal conductor being electrically isolated from the substrate;
etching a first portion and a second portion of the metal conductor within the CMOS integrated circuit device to form an unetched portion of the metal conductor;
forming a MEMS layer overlying the CMOS integrated circuit device, the MEMS layer being coupled to the metal conductor;
patterning the MEMS layer with a plasma etching process to form a MEMS device overlying the CMOS integrated circuit device, the MEMS device being formed overlying the unetched portion of the metal conductor, wherein the unetched portion of the metal conductor is protected from the plasma during the plasma etching process, wherein the first portion of the metal conductor is etched to remove a portion that would be directly exposed to plasma during the plasma etching process, wherein the second portion of the metal conductor is etched to remove a portion that would be indirectly exposed to plasma during the plasma etching process; and
electrically coupling the metal conductor to the substrate of the CMOS integrated circuit device.
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Accused Products
Abstract
Methods and structure for adapting MEMS structures to form electrical interconnections for integrated circuits. A first portion and a second portion of the metal conductor, which can be electrically isolated within a CMOS IC device, can be etched to form an unetched portion of the metal conductor. The MEMS device can be patterned, from a MEMS layer formed overlying the metal conductor, via a plasma etching process, during which the unetched portion of the metal conductor is protected from the plasma. The metal conductor can be electrically coupled to the CMOS IC device via a conductive jumper or the like. Furthermore, the integrated CMOS-MEMS device can include a MEMS device coupled to a CMOS IC device via an electrically isolated metal conductor within the CMOS IC device. Also, the metal conductor can be electrically coupled to the substrate of the CMOS IC device via a conductive jumper.
191 Citations
10 Claims
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1. A method for manufacturing a CMOS-MEMS integrated device, the method comprising:
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providing a CMOS integrated circuit device having a substrate and a metal conductor, the metal conductor being electrically isolated from the substrate; etching a first portion and a second portion of the metal conductor within the CMOS integrated circuit device to form an unetched portion of the metal conductor; forming a MEMS layer overlying the CMOS integrated circuit device, the MEMS layer being coupled to the metal conductor; patterning the MEMS layer with a plasma etching process to form a MEMS device overlying the CMOS integrated circuit device, the MEMS device being formed overlying the unetched portion of the metal conductor, wherein the unetched portion of the metal conductor is protected from the plasma during the plasma etching process, wherein the first portion of the metal conductor is etched to remove a portion that would be directly exposed to plasma during the plasma etching process, wherein the second portion of the metal conductor is etched to remove a portion that would be indirectly exposed to plasma during the plasma etching process; and electrically coupling the metal conductor to the substrate of the CMOS integrated circuit device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification