Semiconductor device and method for manufacturing the same

• US 8,653,514 B2
• Filed: 04/05/2011
• Issued: 02/18/2014
• Est. Priority Date: 04/09/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Such, Matthew W
• Assistant Examiner(s): Harrison, Monica D
• Application Number:
  US13/080,063
• Publication Number:
  US 20110248261A1
• Time in Patent Office: 1,050 Days
• Field of Search: 257/43, 257/E29.296
• US Class Current: 257/43
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

Claims

1. A semiconductor device comprising:

a first gate electrode over a substrate;

a first gate insulating layer comprising a first metal oxide film, over the first gate electrode;

an oxide semiconductor layer overlapping with the first gate electrode, over the first gate insulating layer;

a source electrode and a drain electrode over the oxide semiconductor layer;

a second gate insulating layer comprising a second metal oxide film, over the oxide semiconductor layer, the source electrode, and the drain electrode; and

a second gate electrode over the second gate insulating layer,

wherein the first metal oxide film and the second metal oxide film are gallium oxide films.

2. The semiconductor device according to claim 1, wherein the second gate electrode does not overlap the source electrode and the drain electrode.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains at least gallium.

4. The semiconductor device according to claim 1,

wherein the first gate insulating layer is formed of a stacked structure including the gallium oxide film and a film, and

wherein the gallium oxide film is in contact with the oxide semiconductor layer.

5. The semiconductor device according to claim 4, wherein the film comprises a material selected from the group consisting of a hafnium oxide film, a hafnium silicate film, a hafnium oxynitride silicate film, and a hafnium aluminate film.

6. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains indium, zinc and a metal other than indium and zinc.

7. The semiconductor device according to claim 1, wherein at least a channel formation region of the oxide semiconductor layer is intrinsic or substantially intrinsic.

8. The semiconductor device according to claim 1, wherein a carrier concentration of the oxide semiconductor layer is lower than 1×

10¹⁴/cm³.

9. A semiconductor device comprising:

a first metal oxide film over a substrate;

a source electrode and a drain electrode over the first metal oxide film;

an oxide semiconductor layer over the first metal oxide film, the source electrode, and the drain electrode;

a gate insulating layer comprising a second metal oxide film, over the oxide semiconductor layer; and

a gate electrode which overlaps with the oxide semiconductor layer with the gate insulating layer interposed therebetween,

wherein the first metal oxide film and the second metal oxide film are gallium oxide films.

10. The semiconductor device according to claim 9, wherein the oxide semiconductor layer contains at least gallium.

11. The semiconductor device according to claim 9,

wherein the gate insulating layer is formed of a stacked structure including the gallium oxide film and a film, and

wherein the gallium oxide film is in contact with the oxide semiconductor layer.

12. The semiconductor device according to claim 11,

wherein the film comprises a material selected from the group consisting of a hafnium oxide film, a hafnium silicate film, a hafnium oxynitride silicate film, and a hafnium aluminate film.

13. The semiconductor device according to claim 9, wherein the oxide semiconductor layer contains indium, zinc and a metal other than indium and zinc.

14. The semiconductor device according to claim 9, wherein at least a channel formation region of the oxide semiconductor layer is intrinsic or substantially intrinsic.

15. The semiconductor device according to claim 9, wherein a carrier concentration of the oxide semiconductor layer is lower than 1×

10¹⁴/cm³.

16. A semiconductor device comprising:

a first metal oxide film over a substrate;

an oxide semiconductor layer over the first metal oxide film;

a source electrode and a drain electrode over the oxide semiconductor layer;

a gate insulating layer comprising a second metal oxide film, over the oxide semiconductor layer, the source electrode, and the drain electrode; and

a gate electrode which overlaps with the oxide semiconductor layer with the gate insulating layer interposed therebetween,

wherein the first metal oxide film and the second metal oxide film are gallium oxide films.

17. The semiconductor device according to claim 16, wherein the oxide semiconductor layer contains at least gallium.

18. The semiconductor device according to claim 16,

wherein the gate insulating layer is formed of a stacked structure including the gallium oxide film and a film, and

wherein the gallium oxide film is in contact with the oxide semiconductor layer.

19. The semiconductor device according to claim 18, wherein the film comprises a material selected from the group consisting of a hafnium oxide film, a hafnium silicate film, a hafnium oxynitride silicate film, and a hafnium aluminate film.

20. The semiconductor device according to claim 16, wherein the oxide semiconductor layer contains indium, zinc and a metal other than indium and zinc.

21. The semiconductor device according to claim 16, wherein at least a channel formation region of the oxide semiconductor layer is intrinsic or substantially intrinsic.

22. The semiconductor device according to claim 16, wherein a carrier concentration of the oxide semiconductor layer is lower than 1×

10¹⁴/cm³.