Semiconductor component arrangement and method for producing thereof

• US 8,653,591 B2
• Filed: 08/09/2012
• Issued: 02/18/2014
• Est. Priority Date: 07/03/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Zundel, Markus, Krischke, Norbert
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Gebreyesus, Yosef
• Application Number:
  US13/570,710
• Publication Number:
  US 20120299092A1
• Time in Patent Office: 558 Days
• Field of Search: 257/343, 257/334, 257/408, 257/344, 257/52, 257/E29.031, 257/E29.045, 257/E29.119, 257/E29.12, 257/E29.187, 257/E21.373, 257/E21.428, 257/E21.455, 257/E27.091, 257/E29.201
• US Class Current: 257/331
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 21/823487 with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface with a current flow parallel to the substrate surface H01L21/823431
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.

Claims

1. A semiconductor component arrangement comprising at least one power semiconductor component and at least one logic component integrated in a semiconductor body having a first side, the logic component comprising:

a trench extending into the semiconductor body proceeding from the first side;

at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric;

a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which a first body zone of a second conduction type is arranged; and

at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench, wherein the first and second drain zones are electrically conductively connected to one another via a short-circuiting zone, and wherein the at least one gate electrode comprises a first gate electrode and a second electrode vertically set and isolated from one another by the gate dielectric.

2. The semiconductor component arrangement of claim 1, wherein the first gate electrode is arranged adjacent to the first body zone and the second gate electrode is arranged adjacent to the second body zone.

3. The semiconductor component arrangement of claim 1,

wherein the first drain zone, the first body zone and the first source zone form a first transistor,

wherein the second drain zone, the second body zone and the second source zone form a second transistor, and

wherein the first and the second transistor are connected to form a transistor half-bridge or a CMOS inverter.

4. The semiconductor component arrangement of claim 1, wherein the first MOS transistor is of a first type, and the second MOS transistor is of a second type which is complementary to the first type.

5. A semiconductor component arrangement comprising at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body, the logic component comprising:

a trench extending into the semiconductor body proceeding from a first side;

at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric;

a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a longitudinal direction of the trench and between which a first body zone of a second conduction type is arranged; and

at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench, wherein the first and second drain zones are electrically conductively connected to one another via a short-circuiting zone, and wherein the at least one gate electrode comprises a first gate electrode and a second electrode vertically offset and isolated from one another by the gate dielectric.

6. A semiconductor component arrangement comprising at least one logic component integrated in a semiconductor body, having a first side, the logic component comprising:

a trench extending into the semiconductor body proceeding from the first side;

at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric;

a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which a first body zone of a second conduction type is arranged; and

at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench, wherein the first and second drain zones are electrically conductive connected to one another via short-circuiting zone, and wherein the at least one gate electrode comprises a first gate electrode and a second electrode vertically offset and isolated from one another by the gate dielectric.

7. The semiconductor component arrangement of claim 6, wherein the first gate electrode is arranged adjacent to the first body zone and the second gate electrode is arranged adjacent to the second body zone.

8. The semiconductor component arrangement of claim 6, wherein the power semiconductor component is a trench MOSFET.

9. The semiconductor component arrangement of claim 6,

wherein the first drain zone, the first body zone and the first source zone form a first transistor,

wherein the second drain zone, the second body zone and the second source zone form a second transistor, and

wherein the first and the second transistor are connected to form a transistor half-bridge or a CMOS inverter.

10. A semiconductor component body comprising:

a power semiconductor component integrated in the semiconductor body;

a trench extending into the semiconductor body from a first surface;

a first gate electrode and a second gate electrode vertically offset from one another in the trench;

a gate dielectric arranged to insulate the gate electrodes from one another and from the semiconductor body;

a first source zone of a first conduction type in the semiconductor body and adjacent the gate dielectric;

a first drain zone of a first conduction type in the semiconductor body, adjacent the gate dielectric and spaced apart from the source zone in a peripheral direction relative to the trench;

a first body zone of a second conduction type between the first source zone and the first drain zone, wherein the gate electrode, the gate dielectric, the first source zone, the first drain zone and the first body zone together form a first MOS transistor; and

a second source zone, a second drain zone and a second body zone formed along the trench to form a second MOS transistor, the first and second MOS transistors being connected in series, wherein the first and second drain zones are electrically conductively connected to one another via a short-circuiting zone.

11. The semiconductor component body of claim 10, wherein the first and second drain zones are electrically conductively connected to one another such that the first and the second transistor form a transistor half bridge or a CMOS converter.

12. The semiconductor component body of claim 10, wherein the first gate electrode is arranged adjacent to the first body zone and the second gate electrode is arranged adjacent to the second body zone.