Zigzag pattern for TSV copper adhesion
First Claim
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1. A semiconductor device comprising:
- a substrate with a first conductive feature;
a passivation layer over the first conductive feature;
a first contact pad extending through multiple openings in the passivation layer to make multiple discontinuous contacts with the first conductive feature, wherein the first contact pad extends no further than the passivation layer and wherein the first contact pad has a non-planar first surface located on an opposite side of the first contact pad than the substrate; and
a through substrate via with a continuous composition, wherein a portion of the through substrate via extends over and is in contact with the first surface of the first contact pad.
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Abstract
A system and method for forming a TSV contact is presented. A preferred embodiment includes a TSV in contact with a portion of the uppermost metal layer of a semiconductor die. The interface between the TSV conductor and the contact pad is preferably characterized by a non-planar zigzag pattern that forms a grid pattern of contacts. Alternatively, the contacts may form a plurality of metal lines that make contact with the contact pad.
51 Citations
18 Claims
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1. A semiconductor device comprising:
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a substrate with a first conductive feature; a passivation layer over the first conductive feature; a first contact pad extending through multiple openings in the passivation layer to make multiple discontinuous contacts with the first conductive feature, wherein the first contact pad extends no further than the passivation layer and wherein the first contact pad has a non-planar first surface located on an opposite side of the first contact pad than the substrate; and a through substrate via with a continuous composition, wherein a portion of the through substrate via extends over and is in contact with the first surface of the first contact pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a semiconductor substrate; metal layers over the semiconductor substrate; a passivation layer over the metal layers, the passivation layer having a first maximum thickness perpendicular to the semiconductor substrate; a first conductor extending through multiple openings in the passivation layer and sharing an interface with an uppermost metal layer, wherein, in a first direction, the first conductor alternates between contacting the uppermost metal layer and the passivation layer, the multiple openings having a second thickness at least as great as the first maximum thickness of the passivation layer, and wherein the interface between the first conductor and the uppermost metal layer is planar, the first conductor being conformal and being a contact pad located in an exterior region of the semiconductor device; and a through substrate via through the semiconductor substrate, the through substrate via having a continuous composition and wherein a portion of the through substrate via extends over and is in contact with the contact pad. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor substrate comprising a first metal layer; a passivation layer over portions of the first metal layer; a first conductive layer shaped in a zigzag pattern with a plurality of extensions through the passivation layer to make a plurality of contact points with the first metal layer, the first conductive layer being a contact pad and being in contact with between about 30% and about 70% of the first metal layer, wherein the extensions extend no further than a bottom surface of the passivation layer, wherein the contact pad is adjacent to an external passivation layer of the semiconductor device and wherein at least a portion of an upper surface of the contact pad extends below the passivation layer; and a second conductive layer filling the zigzag pattern and extending above an upper-most portion of the first conductive layer, the second conductive layer having a continuous composition and extending through the semiconductor substrate. - View Dependent Claims (15, 16, 17, 18)
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Specification