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Semiconductor device and driving method thereof

  • US 8,654,566 B2
  • Filed: 08/31/2011
  • Issued: 02/18/2014
  • Est. Priority Date: 09/03/2010
  • Status: Expired due to Fees
First Claim
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1. A driving method for a semiconductor device, the semiconductor device comprises a memory cell including:

  • a first transistor comprising a first gate electrode; and

    a second transistor comprising;

    a second channel formation region that overlaps with at least a part of one of a source and a drain of the first transistor with an insulating layer interposed therebetween; and

    a second gate electrode over the second channel fat nation region,wherein one of a source and a drain of the second transistor is electrically connected to the first gate electrode so that a node is formed,the driving method comprising the steps of;

    turning on the second transistor so that charge is supplied to the node,turning off the second transistor so that charge is held in the node, andsupplying a second potential to the second gate electrode at least when a first potential is supplied to the one of the source and the drain of the first transistor in a period during which charge needs to be held in the node,wherein the second potential has opposite polarity with the first potential.

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