Static random-access cell, active matrix device and array element circuit
First Claim
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1. A static random-access memory (SRAM) cell comprising:
- a sampling switch and a feedback switch; and
a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter,wherein an input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch,an output of the second inverter is connected to the input of the first inverter via the feedback switch, andfirst and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively.
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Abstract
A static random-access memory (SRAM) cell which includes: a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter. An input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively.
31 Citations
20 Claims
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1. A static random-access memory (SRAM) cell comprising:
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a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter, wherein an input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively. - View Dependent Claims (2)
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3. An active-matrix device, comprising:
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a plurality of array element circuits arranged in rows and columns; a plurality of source addressing lines each shared between the array element circuits in corresponding same columns; a plurality of gate addressing lines each shared between the array element circuits in corresponding same rows; and a plurality of sensor row select lines each shared between the array element circuits in corresponding same rows, wherein each of the plurality of array element circuits comprises; an array element which is controlled by application of a drive voltage by a drive element; writing circuitry for writing the drive voltage to the drive element, the writing circuitry being coupled to a corresponding source addressing line and gate addressing line among the plurality of source addressing lines and gate addressing lines, and including a static random-access memory (SRAM) cell for storing the drive voltage which is written to the drive element; and sense circuitry for sensing an impedance presented at the drive element, the sense circuitry being coupled to a corresponding sensor row select line; wherein the SRAM cell comprises; a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter, wherein an input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A device having an array element circuit with an integrated impedance sensor, comprising:
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an array element which is controlled by application of a drive voltage by a drive element; writing circuitry for writing the drive voltage to the drive element, the writing circuitry comprising a static random-access memory (SRAM) cell; and sense circuitry for sensing an impedance presented at the drive element; wherein the SRAM cell comprises; a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter, wherein an input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively. - View Dependent Claims (18, 19, 20)
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Specification