High bandwidth memory interface
First Claim
1. A semiconductor device comprising:
- a first flip-flop configured to be driven by an even internal clock to sample even output data of the semiconductor device;
a second flip-flop configured to be driven by an odd internal clock to sample odd output data of the semiconductor device;
a third flip-flop configured to be driven by the even internal clock to sample the odd internal clock; and
a fourth flip-flop configured to be driven by the odd internal clock to sample the even internal clock.
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Accused Products
Abstract
A memory module that includes a buffer and a plurality of synchronous memory devices. The memory module also includes bidirectional bus lines, and each of the synchronous memory devices has bidirectional data terminals. The buffer is configured to regenerate signals received on the bus lines for receipt by the synchronous memory devices, and to regenerate signals received from any one of the synchronous memory devices for receipt by the bus lines. The memory module may further include command lines and a clock line for providing commands and a clock signal to the synchronous memory devices via a command buffer. The combined data bus width of the memory module may be greater than the data bus width of any single one of synchronous memory device, and the total address space provided by the memory module may be larger than the data space for any single synchronous memory device.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a first flip-flop configured to be driven by an even internal clock to sample even output data of the semiconductor device; a second flip-flop configured to be driven by an odd internal clock to sample odd output data of the semiconductor device; a third flip-flop configured to be driven by the even internal clock to sample the odd internal clock; and a fourth flip-flop configured to be driven by the odd internal clock to sample the even internal clock. - View Dependent Claims (2, 3, 4)
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5. A method carried out in a semiconductor device, the method comprising:
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sampling even output data of the semiconductor device by driving a first flip-flop with an even internal clock; sampling odd output data of the semiconductor device by driving a second flip-flop with an odd internal clock; sampling the odd internal clock by driving a third flip-flop with the even internal clock; and sampling the even internal clock by driving a fourth flip-flop with the odd internal clock. - View Dependent Claims (6, 7, 8)
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Specification