Method for manufacturing light emitting device

• US 8,658,443 B2
• Filed: 10/15/2010
• Issued: 02/25/2014
• Est. Priority Date: 08/23/2010
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Formosa Epitaxy Incorporated (Epistar Corporation)
• Inventors: Cheng, Wei-Kang, Pan, Shyi-Ming, Lin, Yu-Chih, Liao, Han-Zhong, Ting, Yi-Sheng
• Primary Examiner(s): Fan, Michele
• Application Number:
  US12/905,258
• Publication Number:
  US 20120045857A1
• Time in Patent Office: 1,229 Days
• Field of Search: 438/22, 438/26, 438/106, 438/125, 257E33056-E33059, 257/E33.06
• US Class Current: 438/26
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A method for manufacturing light emitting device is provided. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. A part of the phosphor layer over the protective layer is removed. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.

Claims

1. A method for manufacturing light emitting devices comprising the steps of:

providing a substrate;

providing and arranging a light emitting module on the substrate, said light emitting module having a light emitting unit and a sub-mount;

forming a first electrode and a second electrode, both of which are electrically connected to the light emitting unit by the sub-mount;

forming a first protective layer and a second protective layer with the first protective layer located over the first electrode and the second protective layer located over at the second electrode;

disposing a phosphor layer on the light emitting module with the phosphor layer covering both the light emitting module and the first and second protective layers;

removing part of the phosphor layer over the first and second protective layers; and

removing the first and second protective layers.

2. The method as claimed in claim 1, wherein the step of providing and arranging a light emitting module on the substrate further includes the steps of:

forming a first conductive film and a second conductive film;

providing and arranging a sub-mount over the first conductive film and the second conductive film with the sub-mount having at least one first connecting unit and at least one second connecting unit;

the first connecting unit electrically connected to the first conductive film and the second connecting unit electrically connected to the second conductive film; and

arranging the light emitting unit on the sub-mount with the light emitting unit electrically connected to both the first connecting unit and the second connecting unit so as to form the light emitting module;

wherein the first conductive film and the second conductive film are electrically connected to the first electrode and the second electrode, respectively.

3. The method as claimed in claim 1, wherein in the step of removing part of the phosphor layer over the first and second protective layers, the phosphor layer is removed by abrasive cutting or machining so that the height of the phosphor layer is no more than the height of the first and second protective layers.

4. The method as claimed in claim 1, wherein in the step of removing the first and second protective layers, the first and second protective layers are removed by etching.

5. The method as claimed in claim 1, wherein a thickness of the phosphor layer ranges from 10 micrometers to 50 micrometers.