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Solution composition for forming oxide thin film and electronic device including the oxide thin film

  • US 8,658,546 B2
  • Filed: 10/12/2012
  • Issued: 02/25/2014
  • Est. Priority Date: 04/09/2009
  • Status: Active Grant
First Claim
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1. A solution composition for forming an oxide thin film, comprising:

  • a first compound including zinc;

    a second compound including indium; and

    a third compound including hafnium,wherein the zinc and hafnium are included at an atomic ratio of about 1;

    0.01 to about 1;

    1, andwherein the first compound includes zinc acetate hydrate, the second compound includes indium nitrate hydrate, and the third compound includes hafnium chloride.

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