Rapid conductive cooling using a secondary process plane

• US 8,658,947 B2
• Filed: 06/29/2012
• Issued: 02/25/2014
• Est. Priority Date: 12/14/2006
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Sorabji, Khurshed, Lerner, Alexander N.
• Primary Examiner(s): FUQUA, SHAWNTINA T
• Application Number:
  US13/538,124
• Publication Number:
  US 20120270166A1
• Time in Patent Office: 606 Days
• Field of Search: 219/390, 219/405, 219/411, 392/416, 392/418, 118/724, 118/725, 118/50.1, 118728- 9, 343/80, 174/15.1, 361/690, 432/18
• US Class Current: 219/411
• CPC Class Codes: C30B 31/14 Substrate holders or susceptors
• CPC Class Codes: H01L 21/30 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 manufacture of electrodes thereon H01L21/28
• CPC Class Codes: H01L 21/67098 Apparatus for thermal treatment
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate at a first temperature to a substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support, heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

Claims

1. A method for thermally treating a substrate, comprising:

transferring a substrate at a first temperature to a movable substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber;

heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support;

heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support; and

cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

2. The method of claim 1, wherein the second time period is about 2 seconds or less.

3. The method of claim 1, further comprising:

moving the substrate support between the heating source and the cooling source.

4. The method of claim 1, wherein the first temperature is a temperature at or near room temperature.

5. The method of claim 4, further comprising:

transferring the substrate out of the chamber after the substrate is cooled to a temperature that is greater than room temperature.

6. The method of claim 1, wherein the third temperature is about 25 degrees Celsius to about 100 degrees Celsius greater than the second temperature.

7. The method of claim 1, wherein the cooling source comprises a gas port configured to flow a cooling gas across the upper portion of the chamber.

8. The method of claim 1, wherein the cooling source comprises a cooling plate disposed in the chamber.

9. The method of claim 8, wherein the cooling plate comprises at least one coolant channel.

10. The method of claim 8, wherein the cooling plate comprises a material having an emissivity of about 0.70 to about 0.95.

11. A method for thermally treating a substrate, comprising:

transferring a substrate at a first temperature to a substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber;

heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support;

moving the substrate support between the heating source and the cooling source;

heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support; and

cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

12. The method of claim 11, wherein the first temperature is a temperature at or near room temperature.

13. The method of claim 11, further comprising:

transferring the substrate out of the chamber after the substrate is cooled to a temperature that is less than the second temperature.

14. The method of claim 13, further comprising:

transferring the substrate out of the chamber after the substrate is cooled to a temperature that is greater than room temperature.

15. The method of claim 11, wherein the third temperature is about 25 degrees Celsius to about 100 degrees Celsius greater than the second temperature.

16. A method for thermally treating a substrate, comprising:

transferring a substrate at a first temperature that is at or near room temperature to a substrate support in a chamber, the substrate support being adjacent a heating source disposed in a first end of the chamber;

heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support;

heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support; and

moving the substrate while the substrate is disposed on the substrate support toward a cooling source disposed in an opposing second end of the chamber to cool the substrate to a fourth temperature that is substantially equal to the second temperature during the second time period.

17. The method of claim 16, wherein the cooling source comprises a gas port configured to flow a cooling gas across the upper portion of the chamber.

18. The method of claim 16, wherein the cooling source comprises a cooling plate disposed in the chamber.

19. The method of claim 18, wherein the cooling plate comprises at least one coolant channel.

20. The method of claim 18, wherein the cooling plate comprises a material having an emissivity of about 0.70 to about 0.95.