Method for manufacturing semiconductor device

• US 8,659,014 B2
• Filed: 07/01/2011
• Issued: 02/25/2014
• Est. Priority Date: 08/30/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Honda, Tatsuya, Arai, Yasuyuki
• Primary Examiner(s): Mandala, Michelle
• Assistant Examiner(s): WHITE, SHAKA SHAKAR
• Application Number:
  US13/174,980
• Publication Number:
  US 20110260160A1
• Time in Patent Office: 970 Days
• Field of Search: 257/43
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: Y10T 428/12917 Next to Fe-base component

Abstract

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.

Claims

1. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating film; and

a first electrode and a second electrode over the first oxide semiconductor layer and the second oxide semiconductor layer,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region.

2. A semiconductor device according to claim 1,

wherein the region is formed with a laser.

3. A semiconductor device according to claim 1,

wherein a plurality of edge portions of the first oxide semiconductor layer are parallel to a plurality of edge portions of the second oxide semiconductor layer.

4. A semiconductor device according to claim 1,

wherein the second oxide semiconductor layer overlaps with the gate electrode.

5. A semiconductor device according to claim 1,

wherein the second oxide semiconductor layer overlaps with the first electrode.

6. A semiconductor device according to claim 1,

wherein the second oxide semiconductor layer overlaps with the second electrode.

7. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating film;

an interlayer insulating film over the first oxide semiconductor layer and the second oxide semiconductor layer;

a first electrode and a second electrode over the interlayer insulating film; and

a pixel electrode over the first electrode and the second electrode,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region.

8. A semiconductor device according to claim 7,

wherein the region is formed with a laser.

9. A semiconductor device according to claim 7,

wherein a plurality of edge portions of the first oxide semiconductor layer are parallel to a plurality of edge portions of the second oxide semiconductor layer.

10. A semiconductor device according to claim 7,

wherein the second oxide semiconductor layer overlaps with the gate electrode.

11. A semiconductor device according to claim 7,

wherein the second oxide semiconductor layer overlaps with the first electrode.

12. A semiconductor device according to claim 7,

wherein the second oxide semiconductor layer overlaps with the second electrode.

13. A semiconductor device according to claim 7,

wherein the second oxide semiconductor layer overlaps with the pixel electrode.

14. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating film;

a first electrode and a second electrode over the first oxide semiconductor layer and the second oxide semiconductor layer; and

a pixel electrode over the first electrode and the second electrode,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer, and

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region.

15. A semiconductor device according to claim 14,

wherein the region is formed with a laser.

16. A semiconductor device according to claim 14,

wherein a plurality of edge portions of the first oxide semiconductor layer are parallel to a plurality of edge portions of the second oxide semiconductor layer.

17. A semiconductor device according to claim 14,

wherein the second oxide semiconductor layer overlaps with the gate electrode.

18. A semiconductor device according to claim 14,

wherein the second oxide semiconductor layer overlaps with the first electrode.

19. A semiconductor device according to claim 14,

wherein the second oxide semiconductor layer overlaps with the second electrode.

20. A semiconductor device according to claim 14,

wherein the second oxide semiconductor layer overlaps with the pixel electrode.

21. A semiconductor device comprising:

a gate electrode;

a gate insulating film;

a first oxide semiconductor layer and a second oxide semiconductor layer; and

a first electrode and a second electrode,

wherein the gate insulating film is interposed between the gate electrode and the first and second oxide semiconductor layers,

wherein the gate electrode overlaps with the first oxide semiconductor layer, and

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer comprises a portion overlapping with the gate electrode between a portion connected to the first electrode and a portion connected to the second electrode, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region.

22. A semiconductor device according to claim 21,

wherein the region is formed with a laser.

23. A semiconductor device according to claim 21,

wherein a plurality of edge portions of the first oxide semiconductor layer are parallel to a plurality of edge portions of the second oxide semiconductor layer.

24. A semiconductor device according to claim 21,

wherein the second oxide semiconductor layer overlaps with the gate electrode.

25. A semiconductor device according to claim 21,

wherein the second oxide semiconductor layer overlaps with the first electrode.

26. A semiconductor device according to claim 21,

wherein the second oxide semiconductor layer overlaps with the second electrode.

27. A semiconductor device comprising:

a gate electrode;

a gate insulating film;

a first oxide semiconductor layer and a second oxide semiconductor layer;

a first electrode and a second electrode; and

a pixel electrode,

wherein the gate insulating film is interposed between the gate electrode and the first and second oxide semiconductor layers,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer comprises a portion overlapping with the gate electrode between a portion connected to the first electrode and a portion connected to the second electrode, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region.

28. A semiconductor device according to claim 27,

wherein the region is formed with a laser.

29. A semiconductor device according to claim 27,

wherein a plurality of edge portions of the first oxide semiconductor layer are parallel to a plurality of edge portions of the second oxide semiconductor layer.

30. A semiconductor device according to claim 27,

wherein the second oxide semiconductor layer overlaps with the gate electrode.

31. A semiconductor device according to claim 27,

wherein the second oxide semiconductor layer overlaps with the first electrode.

32. A semiconductor device according to claim 27,

wherein the second oxide semiconductor layer overlaps with the second electrode.

33. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating film;

an interlayer insulating film over the first oxide semiconductor layer and the second oxide semiconductor layer;

a first electrode and a second electrode over the interlayer insulating film; and

a pixel electrode over the first electrode and the second electrode,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region, and

wherein the pixel electrode overlaps with the second oxide semiconductor layer with the interlayer insulating film therebetween.

34. A semiconductor device according to claim 33,

wherein the region is formed with a laser.

35. A semiconductor device according to claim 33,

wherein the second oxide semiconductor layer does not function as part of a transistor.

36. A semiconductor device comprising:

a gate electrode;

a gate insulating film;

a first oxide semiconductor layer and a second oxide semiconductor layer;

a first electrode and a second electrode;

an interlayer insulating film; and

a pixel electrode;

wherein the gate insulating film is interposed between the gate electrode and the first and second oxide semiconductor layers,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer comprises a portion overlapping with the gate electrode between a portion connected to the first electrode and a portion connected to the second electrode,

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region, and

wherein the pixel electrode overlaps with the second oxide semiconductor layer with at least the interlayer insulating film therebetween.

37. A semiconductor device according to claim 36,

wherein the region is formed with a laser.

38. A semiconductor device according to claim 36,

wherein the second oxide semiconductor layer does not function as part of a transistor.

39. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating film;

a first electrode and a second electrode over the first oxide semiconductor layer and the second oxide semiconductor layer; and

a pixel electrode over the first electrode and the second electrode,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region, and

wherein the pixel electrode overlaps with the second oxide semiconductor layer.

40. A semiconductor device according to claim 39,

wherein the region is formed with a laser.

41. A semiconductor device according to claim 39,

wherein the second oxide semiconductor layer does not function as part of a transistor.

42. A semiconductor device comprising:

a gate electrode;

a gate insulating film;

a first oxide semiconductor layer and a second oxide semiconductor layer;

a first electrode and a second electrode; and

a pixel electrode,

wherein the gate insulating film is interposed between the gate electrode and the first and second oxide semiconductor layers,

wherein the gate electrode overlaps with the first oxide semiconductor layer,

wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer comprises a portion overlapping with the gate electrode between a portion connected to the first electrode and a portion connected to the second electrode,

wherein the pixel electrode is electrically connected to the first oxide semiconductor layer,

wherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region, and

wherein the pixel electrode overlaps with the second oxide semiconductor layer.

43. A semiconductor device according to claim 42,

wherein the region is formed with a laser.

44. A semiconductor device according to claim 42,

wherein the second oxide semiconductor layer does not function as part of a transistor.