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Method for manufacturing semiconductor device

  • US 8,659,014 B2
  • Filed: 07/01/2011
  • Issued: 02/25/2014
  • Est. Priority Date: 08/30/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode over a substrate;

    a gate insulating film over the gate electrode;

    a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating film; and

    a first electrode and a second electrode over the first oxide semiconductor layer and the second oxide semiconductor layer,wherein the gate electrode overlaps with the first oxide semiconductor layer,wherein the first electrode and the second electrode are electrically connected to the first oxide semiconductor layer, andwherein the first oxide semiconductor layer and the second oxide semiconductor layer are isolated by a region.

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