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Semiconductor device

  • US 8,659,015 B2
  • Filed: 02/23/2012
  • Issued: 02/25/2014
  • Est. Priority Date: 03/04/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a coil;

    a capacitor whose first terminal is electrically connected to a first terminal of the coil and whose second terminal is electrically connected to a second terminal of the coil;

    a passive element whose first terminal is electrically connected to the first terminal of the coil;

    a first transistor whose first terminal is electrically connected to a second terminal of the passive element and whose second terminal is electrically connected to the second terminal of the coil;

    a second transistor whose first terminal is electrically connected to a gate of the first transistor;

    a second capacitor whose first terminal is electrically connected to the gate of the first transistor;

    a third transistor whose first terminal is electrically connected to the first terminal of the coil and whose second terminal is electrically connected to a second terminal of the second capacitor; and

    a load whose first terminal is electrically connected to the second terminal of the third transistor and whose second terminal is electrically connected to the second terminal of the coil,wherein the second transistor comprises a semiconductor layer including a channel, the channel including an oxide semiconductor.

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