×

Semiconductor light-emitting device and process for production thereof

  • US 8,659,040 B2
  • Filed: 04/05/2012
  • Issued: 02/25/2014
  • Est. Priority Date: 01/06/2009
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor light-emitting device comprising:

  • a semiconductor layer;

    a current spreading layer formed on said semiconductor layer;

    a relief structure formed on a surface of said current spreading layer where light is extracted, wherein the relief structure and the current spreading layer are formed of the same semiconductor material; and

    an electrode formed on said current spreading layer where no relief structure is formed,wherein said relief structure is formed in the area of 10 μ

    m or less from the electrode.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×