Semiconductor light-emitting device and process for production thereof
First Claim
1. A semiconductor light-emitting device comprising:
- a semiconductor layer;
a current spreading layer formed on said semiconductor layer;
a relief structure formed on a surface of said current spreading layer where light is extracted, wherein the relief structure and the current spreading layer are formed of the same semiconductor material; and
an electrode formed on said current spreading layer where no relief structure is formed,wherein said relief structure is formed in the area of 10 μ
m or less from the electrode.
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Abstract
One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
14 Citations
11 Claims
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1. A semiconductor light-emitting device comprising:
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a semiconductor layer; a current spreading layer formed on said semiconductor layer; a relief structure formed on a surface of said current spreading layer where light is extracted, wherein the relief structure and the current spreading layer are formed of the same semiconductor material; and an electrode formed on said current spreading layer where no relief structure is formed, wherein said relief structure is formed in the area of 10 μ
m or less from the electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification