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Methods of forming nickel sulphide film on a semiconductor device

  • US 8,659,058 B2
  • Filed: 03/18/2011
  • Issued: 02/25/2014
  • Est. Priority Date: 12/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate having a gate electrode formed thereon;

    a source region and a drain region formed in the substrate, wherein the source and drain regions are formed on opposite sides of the gate electrode;

    an interlayer dielectric formed on the substrate and the source and drain regions, the interlayer dielectric havinga first opening extending from the top surface of the interlayer dielectric to the source region; and

    a second opening extending from the top surface of the interlayer dielectric to the drain region;

    a first nickel sulfide contact layer formed on the source region in the first opening; and

    a second nickel sulfide contact layer formed on the drain region in the second opening.

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