Semiconductor device structures and related processes
DC CAFCFirst Claim
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1. A semiconductor device structure, comprising:
- a gate which is positioned in a first trench, and capacitively coupled to control vertical conduction from a first-conductivity-type source through semiconductor material which is adjacent to said trench;
recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches; and
diffusions of a second conductivity type lying at least partially directly below said respective second trenches.
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Abstract
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
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Citations
15 Claims
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1. A semiconductor device structure, comprising:
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a gate which is positioned in a first trench, and capacitively coupled to control vertical conduction from a first-conductivity-type source through semiconductor material which is adjacent to said trench; recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches; anddiffusions of a second conductivity type lying at least partially directly below said respective second trenches. - View Dependent Claims (3, 5, 6, 7, 8, 9)
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2. A semiconductor device structure, comprising:
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a gate which is positioned in a first trench, and capacitively coupled to control vertical conduction from a first-conductivity-type source through semiconductor material which is adjacent to said trench; recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches; anddiffusions of a second conductivity type lying at least partially beneath said respective second trenches; wherein said device further includes a layer of dopant concentration region of second-conductivity-type that extends from a source layer to at least one of said diffusions.
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4. A semiconductor device structure, comprising:
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a gate which is positioned in a first trench, and capacitively coupled to control vertical conduction from a first-conductivity-type source through semiconductor material which is adjacent to said trench; recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches; anddiffusions of a second conductivity type lying at least partially beneath said respective second trenches; wherein said device further includes a layer of dopant concentration region of second-conductivity-type that extends from a source layer to at least one of said diffusions and at least one of said diffusions extends vertically and merges with a body layer of second-conductivity-type.
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10. A semiconductor device structure, comprising:
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a semiconductor layer; a gate which is positioned in a first trench within said semiconductor layer, and is capacitively coupled to control vertical conduction from a first-conductivity-type source through second-conductivity-type portions of said layer near said trench; recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches;diffusion components of a second conductivity type lying at least partially directly below said respective second trenches; whereby said diffusion components reduce depletion of said second-conductivity-type portions of said layer in the OFF state. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification