Active matrix substrate and liquid crystal device
First Claim
1. An active matrix substrate comprising a plurality of pairs of an inverted staggered type thin-film transistor and a pixel electrode arranged in array, the inverted staggered thin-film type transistor comprising a gate electrode and a gate insulating film sequentially formed on an insulative substrate, a channel layer comprising a crystalline semiconductor film and an amorphous semiconductor film sequentially formed on the gate insulating film, and a source electrode and a drain electrode formed on the channel layer with a space therebetween, whereina source electrode side and/or a drain electrode side of the crystalline semiconductor film extends to an area located outside both the thin-film transistor and the gate electrode,the active matrix substrate further comprises a metal light-shielding film formed, in a same layer as the gate electrode, between a contacting portion between the source electrode or a source line connected to the source electrode and the crystalline semiconductor film and the gate electrode and between a contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode, andthe metal light-shielding film is not formed in extended portions which are located outside the contacting portions in a direction of the source line and the metal light-shielding film does not block light in the extended portions.
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Accused Products
Abstract
In an active matrix substrate, the source electrode side and/or the drain electrode side of a crystalline semiconductor film extends to an area located outside both the thin-film transistor and the gate electrode, and a metal light-shielding film is provided, in the same layer as the gate electrode, between the contacting portion between the source electrode or the source line and the crystalline semiconductor film and the gate electrode, and/or between the contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode. An impurity-implanted region implanted with n-type impurity may be formed between the contacting portion between the source electrode or the source line and the crystalline semiconductor film and the gate electrode, and/or between the contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode.
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Citations
7 Claims
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1. An active matrix substrate comprising a plurality of pairs of an inverted staggered type thin-film transistor and a pixel electrode arranged in array, the inverted staggered thin-film type transistor comprising a gate electrode and a gate insulating film sequentially formed on an insulative substrate, a channel layer comprising a crystalline semiconductor film and an amorphous semiconductor film sequentially formed on the gate insulating film, and a source electrode and a drain electrode formed on the channel layer with a space therebetween, wherein
a source electrode side and/or a drain electrode side of the crystalline semiconductor film extends to an area located outside both the thin-film transistor and the gate electrode, the active matrix substrate further comprises a metal light-shielding film formed, in a same layer as the gate electrode, between a contacting portion between the source electrode or a source line connected to the source electrode and the crystalline semiconductor film and the gate electrode and between a contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode, and the metal light-shielding film is not formed in extended portions which are located outside the contacting portions in a direction of the source line and the metal light-shielding film does not block light in the extended portions.
Specification