Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a base film over a substrate;
performing chemical mechanical polishing treatment on the base film;
performing plasma treatment on the base film after the chemical mechanical polishing treatment; and
forming an oxide semiconductor layer over a planar surface which is obtained by the plasma treatment and the chemical mechanical polishing treatment.
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Accused Products
Abstract
An object is to provide a semiconductor device having excellent characteristics, in which a channel layer includes an oxide semiconductor with high crystallinity. In addition, a semiconductor device including a base film with improved planarity is provided. CMP treatment is performed on the base film of the transistor and plasma treatment is performed thereon after the CMP treatment, whereby the base film can have a center line average roughness Ra75 of less than 0.1 nm. The oxide semiconductor layer with high crystallinity is formed over the base film having planarity, which is obtained by the combination of the plasma treatment and the CMP treatment, thereby improving the characteristics of the semiconductor device.
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Citations
17 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a base film over a substrate; performing chemical mechanical polishing treatment on the base film; performing plasma treatment on the base film after the chemical mechanical polishing treatment; and forming an oxide semiconductor layer over a planar surface which is obtained by the plasma treatment and the chemical mechanical polishing treatment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a base film over a substrate; performing first plasma treatment on the base film; performing chemical mechanical polishing treatment on the base film after the first plasma treatment; performing second plasma treatment on the base film after the chemical mechanical polishing treatment; and forming an oxide semiconductor layer over a planar surface which is obtained by the first plasma treatment, the chemical mechanical polishing treatment, and the second plasma treatment. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification