Light emitting devices having light coupling layers with recessed electrodes
First Claim
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1. A light emitting device, comprising:
- a substrate;
a p-type Group III-V semiconductor layer adjacent to the substrate;
an active layer adjacent to the p-type semiconductor layer;
an n-type Group III-V semiconductor layer adjacent to the active layer;
a light coupling structure adjacent to the n-type Group III-V semiconductor layer, the light coupling structure comprising one or more Group III-V semiconductor materials, wherein the light coupling structure has a corrugated surface including a first corrugation portion and comprises an orifice extending to the n-type Group III-V semiconductor layer, the orifice including a second corrugation portion different from the first corrugation portion; and
an electrode formed on the second corrugation portion in the orifice, the electrode in electrical communication with the n-type Group III-V semiconductor layer.
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Abstract
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.
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Citations
41 Claims
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1. A light emitting device, comprising:
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a substrate; a p-type Group III-V semiconductor layer adjacent to the substrate; an active layer adjacent to the p-type semiconductor layer; an n-type Group III-V semiconductor layer adjacent to the active layer; a light coupling structure adjacent to the n-type Group III-V semiconductor layer, the light coupling structure comprising one or more Group III-V semiconductor materials, wherein the light coupling structure has a corrugated surface including a first corrugation portion and comprises an orifice extending to the n-type Group III-V semiconductor layer, the orifice including a second corrugation portion different from the first corrugation portion; and an electrode formed on the second corrugation portion in the orifice, the electrode in electrical communication with the n-type Group III-V semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A light emitting device, comprising:
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a first layer of a first type of Group III-V semiconductor material; a second layer adjacent to the first layer, the second layer having an active material configured to generate light upon the recombination of electrons and holes; a third layer adjacent to the second layer, the third layer comprising a second type of Group III-V semiconductor material; a light coupling structure adjacent to the third layer, the light coupling structure comprising a third type of Group III-V semiconductor material, wherein the light coupling structure has a corrugated surface including a first corrugation portion and comprises an opening extending through at least a portion of the light coupling structure, the opening including a second corrugation portion being different from the first corrugation portion; and an electrode adjacent to said light coupling structure, the electrode in electrical communication with said one of the first layer and the second layer. - View Dependent Claims (20, 21, 22, 23)
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24. A light emitting device, comprising:
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a substrate; a p-type Group III-V semiconductor layer adjacent to the substrate; an active layer adjacent to the p-type semiconductor layer; an n-type Group III-V semiconductor layer adjacent to the active layer; a light coupling structure adjacent to the n-type Group III-V semiconductor layer, the light coupling structure comprising one or more Group III-V semiconductor materials, wherein the light coupling structure comprises a corrugated surface including a first corrugation portion and a second corrugation portion different from the first corrugation portion; and an electrode formed on the second corrugation portion of the light coupling structure, the electrode in electrical communication with the n-type Group III-V semiconductor layer. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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Specification