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Light emitting devices having light coupling layers with recessed electrodes

  • US 8,664,679 B2
  • Filed: 09/29/2011
  • Issued: 03/04/2014
  • Est. Priority Date: 09/29/2011
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a substrate;

    a p-type Group III-V semiconductor layer adjacent to the substrate;

    an active layer adjacent to the p-type semiconductor layer;

    an n-type Group III-V semiconductor layer adjacent to the active layer;

    a light coupling structure adjacent to the n-type Group III-V semiconductor layer, the light coupling structure comprising one or more Group III-V semiconductor materials, wherein the light coupling structure has a corrugated surface including a first corrugation portion and comprises an orifice extending to the n-type Group III-V semiconductor layer, the orifice including a second corrugation portion different from the first corrugation portion; and

    an electrode formed on the second corrugation portion in the orifice, the electrode in electrical communication with the n-type Group III-V semiconductor layer.

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