Semiconductor light emitting device and method of fabricating the same

• US 8,664,682 B2
• Filed: 01/18/2013
• Issued: 03/04/2014
• Est. Priority Date: 06/22/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Sang Youl
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Diaz, Jose R
• Application Number:
  US13/745,402
• Publication Number:
  US 20130126899A1
• Time in Patent Office: 410 Days
• Field of Search: 257/79, 257/94, 257/99, 257/98, 257/E33.001, 257/E33.005, 257/E33.002
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a first electrode on the first conductive type semiconductor layer, wherein the light emitting structure includes an outer groove formed at an outer area of the light emitting structure, wherein a thickness of an outmost area of the light emitting structure is smaller than a thickness of an center area of the light emitting structure, and wherein the first conductive type semiconductor layer includes AlGaN layer and the second conductive type semiconductor layer includes AlGaN layer.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a reflective electrode layer under the light emitting structure;

an outer protection layer disposed on an outer of the reflective electrode layer;

a conductive support substrate under the reflective electrode layer; and

a first electrode on the first conductive type semiconductor layer,

wherein the light emitting structure includes an outer groove formed at an outer area of the light emitting structure,

wherein a thickness of an outmost area of the light emitting structure is smaller than a thickness of a center area of the light emitting structure,

wherein the first conductive type semiconductor layer includes an AlGaN layer and the second conductive type semiconductor layer includes an AlGaN layer, and

wherein the outer protection layer is insulated from the conductive support substrate or the reflective electrode layer.

2. The semiconductor light emitting device according to claim 1, wherein a width of the outer groove is between 10 μ

m to 500 μ

m.

3. The semiconductor light emitting device according to claim 1, wherein the reflective electrode layer is formed of a single layer or multilayer having one among Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, a combination thereof.

4. The semiconductor light emitting device according to claim 1, further comprising an additional dielectric at the outer of the light emitting structure.

5. The semiconductor light emitting device according to claim 1, wherein the outer protection layer has a width that is larger than a width of the outer groove.

6. The semiconductor light emitting device according to claim 1, wherein the outer protection layer has a width ranged between 20 μ

m to 600 μ

m.

7. The semiconductor light emitting device according to claim 1, wherein the active layer includes a quantum well layer formed of InGaN and a quantum barrier layer formed of GaN alternately.

8. The semiconductor light emitting device according to claim 1, further comprising a transparent electrode layer under the second conductive type semiconductor layer.

9. The semiconductor light emitting device according to claim 1, wherein the outer groove is formed with a depth from the first conductive type semiconductor layer to the depth exposing a part of the second conductive type semiconductor layer or the outer protection layer.

10. The semiconductor light emitting device according to claim 1, wherein the outer groove is formed with a depth from the first conductive type semiconductor layer to the depth exposing a part of the outer protection layer.

11. The semiconductor light emitting device according to claim 1, wherein the outer protection layer is disposed between the reflective electrode layer and the light emitting structure.

12. A semiconductor light emitting device comprising:

a light emitting structure comprising an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer;

a first electrode on the n-type semiconductor layer;

an electrode layer under the p-type semiconductor layer;

a protection layer disposed on an outer of the electrode layer; and

a support substrate under the electrode layer,

wherein the light emitting structure includes an outer groove formed at an outer area of the light emitting structure,

wherein a thickness of an outmost area of the light emitting structure is smaller than a thickness of a center area of the light emitting structure,

wherein the n-type semiconductor layer includes an n-type AlGaN layer and the p-type semiconductor layer includes a p-type AlGaN layer,

wherein the electrode layer includes a reflective material, and

wherein the protection layer comprises at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and is doped with n-type dopants, p-type dopants or is undoped.

13. The semiconductor light emitting device according to claim 12, wherein the protection layer is disposed between the electrode layer and the p-type semiconductor layer.

14. The semiconductor light emitting device according to claim 12, wherein the reflective material includes at least one of Ag, Ni, or Pt.

15. The semiconductor light emitting device according to claim 12, wherein the protection layer has a width that is larger than a width of the outer groove.

16. The semiconductor light emitting device according to claim 12, wherein a width of the outer groove is between 10 μ

m to 500 μ

l.

17. The semiconductor light emitting device according to claim 12, further comprising an additional dielectric at the outer of the light emitting structure.

18. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a reflective electrode layer under the light emitting structure;

an outer protection layer disposed on an outer of the reflective electrode layer;

a conductive support substrate under the reflective electrode layer; and

a first electrode on the first conductive type semiconductor layer,

wherein the light emitting structure includes an outer groove formed at an outer area of the light emitting structure,

wherein a thickness of an outmost area of the light emitting structure is smaller than a thickness of a center area of the light emitting structure,

wherein the first conductive type semiconductor layer includes an AlGaN layer and the second conductive type semiconductor layer includes an AlGaN layer, and

wherein the outer protection layer is formed of the same material as the second conductive type semiconductor layer.

19. The semiconductor light emitting device according to claim 18, wherein a width of the outer groove is between 10 μ

m to 500 μ

m.

20. The semiconductor light emitting device according to claim 18, further comprising an additional dielectric at the outer of the light emitting structure.